Publication:
Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m

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dc.contributor.authorAndreev, Igor A.
dc.contributor.authorKunitsyna, Ekaterina V.
dc.contributor.authorMoiseev, Konstantin D.
dc.contributor.authorMikhailova, Maya P.
dc.contributor.authorYakovlev, Yu P.
dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.scopusid16021109400
dc.date.accessioned2022-01-20T09:05:11Z
dc.date.available2022-01-20T09:05:11Z
dc.date.issued2012-01
dc.description.abstractThe electrical end optical characteristics of InAs/InAs0.7Sb0.1P0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V. the reverse current was defined by diffusion mechanism.
dc.description.sponsorshipRussian Foundation for Basic Research (RFBR) - 07-02-01359 / 09-08-91224
dc.identifier.citationAhmetoğlu, M. vd. (2012). "Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m". Infrared Physics & Technology, 55(1), 15-18.
dc.identifier.endpage18
dc.identifier.issn1350-4495
dc.identifier.issn1879-0275
dc.identifier.issue1
dc.identifier.scopus2-s2.0-84655161427
dc.identifier.startpage15
dc.identifier.urihttps://doi.org/10.1016/j.infrared.2011.07.006
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1350449511000831
dc.identifier.urihttps://www.infona.pl/resource/bwmeta1.element.elsevier-8d5ec347-ea4b-36d9-83fe-9fcdf031173d
dc.identifier.urihttp://hdl.handle.net/11452/24182
dc.identifier.volume55
dc.identifier.wos000300966200003
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherElsevier
dc.relation.collaborationSanayi
dc.relation.journalInfrared Physics & Technology
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.relation.tubitak108T325
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectInstruments & instrumentation
dc.subjectOptics
dc.subjectPhysics
dc.subjectIII-V semiconductors
dc.subjectDark currents
dc.subjectSpectral sensetivity
dc.subjectPhotodiode structures
dc.subjectLiquid phase epitaxy (LPE)
dc.subjectPhotodetector
dc.subjectGrowth
dc.subjectInas
dc.subjectOptical materials
dc.subjectPhotodiodes
dc.subjectCurrent flows
dc.subjectCurrent mechanisms
dc.subjectDiffusion mechanisms
dc.subjectHeterojunction photodiodes
dc.subjectHigh temperature
dc.subjectInAs
dc.subjectLiquid Phase
dc.subjectLow temperature regions
dc.subjectOptical characteristics
dc.subjectReverse bias
dc.subjectReverse currents
dc.subjectSpectral range
dc.subjectTunneling mechanism
dc.subjectHeterojunctions
dc.subject.scopusSemiconductor Quantum Wells; Heterostructures; Photodiodes
dc.subject.wosInstruments & instrumentation
dc.subject.wosOptics
dc.subject.wosPhysics, applied
dc.titleElectrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m
dc.typeArticle
dc.wos.quartileQ2
dc.wos.quartileQ3 (Physics, applied)
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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