Yayın: Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m
Tarih
Kurum Yazarları
Ahmetoğlu, Muhitdin
Yazarlar
Andreev, Igor A.
Kunitsyna, Ekaterina V.
Moiseev, Konstantin D.
Mikhailova, Maya P.
Yakovlev, Yu P.
Danışman
Dil
Türü
Yayıncı:
Elsevier
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Özet
The electrical end optical characteristics of InAs/InAs0.7Sb0.1P0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V. the reverse current was defined by diffusion mechanism.
Açıklama
Kaynak:
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Konusu
Instruments & instrumentation, Optics, Physics, III-V semiconductors, Dark currents, Spectral sensetivity, Photodiode structures, Liquid phase epitaxy (LPE), Photodetector, Growth, Inas, Optical materials, Photodiodes, Current flows, Current mechanisms, Diffusion mechanisms, Heterojunction photodiodes, High temperature, InAs, Liquid Phase, Low temperature regions, Optical characteristics, Reverse bias, Reverse currents, Spectral range, Tunneling mechanism, Heterojunctions
Alıntı
Ahmetoğlu, M. vd. (2012). "Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m". Infrared Physics & Technology, 55(1), 15-18.