Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure
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Date
2005
Authors
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Journal ISSN
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Publisher
Wiley-V C H Verlag
Abstract
We report on n-type (100) oriented Si0.76Ge0.24 samples grown by silicon molecular beam epitaxy (Si-MBE). The grown wafer was, first, cut into small pieces. Some of these pieces were annealed under an inert gas atmosphere at 600 degrees C, 700 degrees C and 800 degrees C for 1 h to induce partial relaxation in Si1-xGex. The formation of Schottky junction was made by Pt deposition on n-Si0.76Ge0.24. The electrical properties of, both, the unannealed and annealed Pt/n-Si0.76Ge0.24/n-Si were studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. These measurements have been done under different temperatures, and Schottky barrier heights have been determined. Also, these results have been compared with Pt / n-Si.
Description
Bu çalışma, 01-04 Haziran 2005 tarihleri arasında Montpellier’de düzenlenen 7. International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies’de bildiri olarak sunulmuştur.
Keywords
Engineering, Materials science, Optics, Physics, Strain relaxation, SI/SIGE, Layers, Capacitance, Current voltage characteristics, Electric properties, Molecular beam epitaxy, Thermal effects, Capacitance-voltage (C-V) measurements, Schottky barrier heights, Schottky contact properties, Silicon molecular beam epitaxy (Si-MBE), Silicon compounds
Citation
Ertürk, K. vd. (2005). "Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure". ed. M. Stutzmann. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4(Physica Status Solidi C-Current Topics in Solid State Physics), 2(4), 1428-1432.