Publication: Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure
Date
Authors
Ertürk, Kadir
Bektöre, Yüksel
Hacıismailoğlu, Muhammed Cüneyt
Authors
Stutzmann, M.
Advisor
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Publisher:
Wiley-V C H Verlag
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Abstract
We report on n-type (100) oriented Si0.76Ge0.24 samples grown by silicon molecular beam epitaxy (Si-MBE). The grown wafer was, first, cut into small pieces. Some of these pieces were annealed under an inert gas atmosphere at 600 degrees C, 700 degrees C and 800 degrees C for 1 h to induce partial relaxation in Si1-xGex. The formation of Schottky junction was made by Pt deposition on n-Si0.76Ge0.24. The electrical properties of, both, the unannealed and annealed Pt/n-Si0.76Ge0.24/n-Si were studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. These measurements have been done under different temperatures, and Schottky barrier heights have been determined. Also, these results have been compared with Pt / n-Si.
Description
Bu çalışma, 01-04 Haziran 2005 tarihleri arasında Montpellier’de düzenlenen 7. International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies’de bildiri olarak sunulmuştur.
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Keywords
Engineering, Materials science, Optics, Physics, Strain relaxation, SI/SIGE, Layers, Capacitance, Current voltage characteristics, Electric properties, Molecular beam epitaxy, Thermal effects, Capacitance-voltage (C-V) measurements, Schottky barrier heights, Schottky contact properties, Silicon molecular beam epitaxy (Si-MBE), Silicon compounds
Citation
Ertürk, K. vd. (2005). "Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure". ed. M. Stutzmann. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4(Physica Status Solidi C-Current Topics in Solid State Physics), 2(4), 1428-1432.