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Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure

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dc.contributor.authorStutzmann, M.
dc.contributor.buuauthorErtürk, Kadir
dc.contributor.buuauthorBektöre, Yüksel
dc.contributor.buuauthorHacıismailoğlu, Muhammed Cüneyt
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.orcid0000-0002-0781-3376
dc.contributor.researcheridK-7950-2012
dc.contributor.scopusid18036952100
dc.contributor.scopusid8975743400
dc.contributor.scopusid8975743500
dc.date.accessioned2021-11-18T06:41:05Z
dc.date.available2021-11-18T06:41:05Z
dc.date.issued2005
dc.descriptionBu çalışma, 01-04 Haziran 2005 tarihleri arasında Montpellier’de düzenlenen 7. International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies’de bildiri olarak sunulmuştur.
dc.description.abstractWe report on n-type (100) oriented Si0.76Ge0.24 samples grown by silicon molecular beam epitaxy (Si-MBE). The grown wafer was, first, cut into small pieces. Some of these pieces were annealed under an inert gas atmosphere at 600 degrees C, 700 degrees C and 800 degrees C for 1 h to induce partial relaxation in Si1-xGex. The formation of Schottky junction was made by Pt deposition on n-Si0.76Ge0.24. The electrical properties of, both, the unannealed and annealed Pt/n-Si0.76Ge0.24/n-Si were studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. These measurements have been done under different temperatures, and Schottky barrier heights have been determined. Also, these results have been compared with Pt / n-Si.
dc.identifier.citationErtürk, K. vd. (2005). "Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure". ed. M. Stutzmann. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4(Physica Status Solidi C-Current Topics in Solid State Physics), 2(4), 1428-1432.
dc.identifier.endpage1432
dc.identifier.issn1610-1634
dc.identifier.issue4
dc.identifier.scopus2-s2.0-27344453164
dc.identifier.startpage1428
dc.identifier.urihttps://doi.org/10.1002/pssc.200460480
dc.identifier.urihttps://onlinelibrary.wiley.com/doi/10.1002/pssc.200460480
dc.identifier.urihttp://hdl.handle.net/11452/22708
dc.identifier.volume2
dc.identifier.wos000228480500035
dc.indexed.wosCPCIS
dc.language.isoen
dc.publisherWiley-V C H Verlag
dc.relation.bap2003/100
dc.relation.collaborationYurtdışı
dc.relation.journalPhysica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4 (Physica Status Solidi C-Current Topics in Solid State Physics)
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectEngineering
dc.subjectMaterials science
dc.subjectOptics
dc.subjectPhysics
dc.subjectStrain relaxation
dc.subjectSI/SIGE
dc.subjectLayers
dc.subjectCapacitance
dc.subjectCurrent voltage characteristics
dc.subjectElectric properties
dc.subjectMolecular beam epitaxy
dc.subjectThermal effects
dc.subjectCapacitance-voltage (C-V) measurements
dc.subjectSchottky barrier heights
dc.subjectSchottky contact properties
dc.subjectSilicon molecular beam epitaxy (Si-MBE)
dc.subjectSilicon compounds
dc.subject.scopusSige; Dislocations (Crystals); Heterostructures
dc.subject.wosEngineering, electrical & electronic
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosOptics
dc.subject.wosPhysics, condensed matter
dc.titleElectrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure
dc.typeProceedings Paper
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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