Yayın: Electrical properties of GaAs-GaAlAs near infrared light emitting diodes
Tarih
Kurum Yazarları
Ahmetoğlu, Muhitdin
Kucur, Banu
Gücüyener, İsmet
Yazarlar
Danışman
Dil
Türü
Yayıncı:
Natl Inst Optoelectronics
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Özet
The electrical properties have been studied for GaAs/AlxGa1-xAs based infrared light emitting diode. The characteristics of the device have been analyzed and unusual feature of the device was observed. It operates as avalanche photodiode when it is reverse biased, while it operates as light emitting diode (LED) when it is forward biased.
Açıklama
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Konusu
Materials science, Optics, Light emitting diode, Avalanche breakdown, I-V characteristics, Aluminum gallium arsenide, Diodes, Gallium arsenide, III-V semiconductors, Infrared devices, Light emitting diodes, Semiconducting gallium, Infrared light emitting diodes, IV characteristics, Near infrared light, Avalanche diodes
Alıntı
Ahmetoğlu, M. vd. (2012). "Electrical properties of GaAs-GaAlAs near infrared light emitting diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(9-10), 782-784.