Publication:
Electrical properties of GaAs-GaAlAs near infrared light emitting diodes

Simple item page
dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.buuauthorKucur, Banu
dc.contributor.buuauthorGücüyener, İsmet
dc.contributor.departmentTeknik Bilimler Meslek Yüksekokulu
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.departmentMekatronik Programı Bölümü
dc.contributor.scopusid16021109400
dc.contributor.scopusid36903670200
dc.contributor.scopusid15834767100
dc.date.accessioned2022-04-05T06:51:45Z
dc.date.available2022-04-05T06:51:45Z
dc.date.issued2012
dc.description.abstractThe electrical properties have been studied for GaAs/AlxGa1-xAs based infrared light emitting diode. The characteristics of the device have been analyzed and unusual feature of the device was observed. It operates as avalanche photodiode when it is reverse biased, while it operates as light emitting diode (LED) when it is forward biased.
dc.identifier.citationAhmetoğlu, M. vd. (2012). "Electrical properties of GaAs-GaAlAs near infrared light emitting diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(9-10), 782-784.
dc.identifier.endpage784
dc.identifier.issn1842-6573
dc.identifier.issn2065-3824
dc.identifier.issue9-10
dc.identifier.scopus2-s2.0-84872239338
dc.identifier.startpage782
dc.identifier.urihttps://oam-rc.inoe.ro/volume/2012/6/9-10/September-October%202012/articles
dc.identifier.urihttp://hdl.handle.net/11452/25550
dc.identifier.volume6
dc.identifier.wos000310498100002
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.bap2007/36
dc.relation.journalOptoelectronics and Advanced Materials-Rapid Communications
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMaterials science
dc.subjectOptics
dc.subjectLight emitting diode
dc.subjectAvalanche breakdown
dc.subjectI-V characteristics
dc.subjectAluminum gallium arsenide
dc.subjectDiodes
dc.subjectGallium arsenide
dc.subjectIII-V semiconductors
dc.subjectInfrared devices
dc.subjectLight emitting diodes
dc.subjectSemiconducting gallium
dc.subjectInfrared light emitting diodes
dc.subjectIV characteristics
dc.subjectNear infrared light
dc.subjectAvalanche diodes
dc.subject.scopusLiquid Phase Epitaxy; Photoconductive Cells; Inp
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosOptics
dc.titleElectrical properties of GaAs-GaAlAs near infrared light emitting diodes
dc.typeArticle
dc.wos.quartileQ4
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.contributor.departmentTeknik Bilimler Meslek Yüksekokulu/Mekatronik Programı Bölümü
local.indexed.atScopus
local.indexed.atWOS

Files

License bundle

Now showing 1 - 1 of 1
Placeholder
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

İndeksli Yayınlar / Indexed Publications