Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature

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dc.contributor.authorMikhailova, M. P.
dc.contributor.authorStoyanov, Nkolay
dc.contributor.authorAndreychuk, O. V.
dc.contributor.authorMoiseev, K. D.
dc.contributor.authorAndreev, Igor
dc.contributor.authorYakovlev, Yu P.
dc.contributor.buuauthorAfrailov, M. Ahmetoğlu
dc.contributor.departmentUludağ Üniversitesi.tr_TR
dc.contributor.scopusid55153359100en_US
dc.date.accessioned2022-09-14T11:22:08Z
dc.date.available2022-09-14T11:22:08Z
dc.date.issued2002-02
dc.description.abstractThe authors present results of research and development of mid-infrared photodiodes based on antimonide solid solutions operating at room temperature in the spectral range of 1.5-4.8 mum. A new physical approach to the design of long-wavelength photodiodes is proposed by using type II broken-gap heterostructures grown by liquid-phase epitaxy on GaSb substrates. The choice of sequence of the narrow-gap and wide-gap layers in the GaSb/InGaAsSb/GaInAsSb and GaSb/InGaAsSb/AlGaAsSb heterostructures allows one to vary the band energy diagram and barrier heights on the interface. Electrical and photoelectrical parameters of three kinds of devices were studied. A detectivity of D-lambda* = 4.1 x 10(8) cm Hz(1/2)/W was found at lambda = 4.7 mum, T = 300 K.en_US
dc.identifier.citationMikhailova, M. P. (2002). "Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature". IEEE Proceedings Optoelectronics, 149(1), 41-44.en_US
dc.identifier.endpage44tr_TR
dc.identifier.issn1350-2433
dc.identifier.issue1tr_TR
dc.identifier.scopus2-s2.0-0036476782tr_TR
dc.identifier.startpage41tr_TR
dc.identifier.urihttps://doi.org/10.1049/ip-opt:20020348
dc.identifier.urihttps://digital-library.theiet.org/content/journals/10.1049/ip-opt_20020348
dc.identifier.urihttp://hdl.handle.net/11452/28713
dc.identifier.volume149tr_TR
dc.identifier.wos000175120700009
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relation.collaborationYurt dışıtr_TR
dc.relation.journalIEEE Proceedings-Optoelectronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectEmissionen_US
dc.subjectEngineeringen_US
dc.subjectOpticsen_US
dc.subjectTelecommunicationsen_US
dc.subjectEnergy gapen_US
dc.subjectThermodynamic equilibriumen_US
dc.subjectPhotodiodesen_US
dc.subjectBand bendingen_US
dc.subjectBand energy diagramen_US
dc.subjectBarrier heightsen_US
dc.subjectCapacitance voltage characteristicsen_US
dc.subjectCarrier separationen_US
dc.subjectHole concentrationen_US
dc.subjectLong wavelength photodiodesen_US
dc.subjectPhotoelectrical parametersen_US
dc.subjectSpectral responseen_US
dc.subjectSemiconductor growthen_US
dc.subjectHeterojunctionsen_US
dc.subjectInterfaces (materials)en_US
dc.subjectLattice constantsen_US
dc.subjectLiquid phase epitaxyen_US
dc.subjectOhmic contactsen_US
dc.subjectSemiconducting antimony compoundsen_US
dc.subjectSemiconducting indium compoundsen_US
dc.subjectSemiconductor device manufactureen_US
dc.subjectSolid solutionsen_US
dc.subjectSubstratesen_US
dc.subject.scopusSemiconductor Quantum Wells; Heterostructures; Photodiodesen_US
dc.subject.wosEngineering, electrical & electronicen_US
dc.subject.wosOpticsen_US
dc.subject.wosTelecommunicationsen_US
dc.titleType IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperatureen_US
dc.typeArticle
dc.wos.quartileQ2 (Telecommunications)en_US
dc.wos.quartileQ4 (Optics)en_US
dc.wos.quartileQ3 (Engineering, electrical & electronic)en_US

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