Publication:
Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature

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dc.contributor.authorMikhailova, M. P.
dc.contributor.authorStoyanov, Nkolay
dc.contributor.authorAndreychuk, O. V.
dc.contributor.authorMoiseev, K. D.
dc.contributor.authorAndreev, Igor
dc.contributor.authorYakovlev, Yu P.
dc.contributor.buuauthorAfrailov, M. Ahmetoğlu
dc.contributor.departmentUludağ Üniversitesi
dc.contributor.scopusid55153359100
dc.date.accessioned2022-09-14T11:22:08Z
dc.date.available2022-09-14T11:22:08Z
dc.date.issued2002-02
dc.description.abstractThe authors present results of research and development of mid-infrared photodiodes based on antimonide solid solutions operating at room temperature in the spectral range of 1.5-4.8 mum. A new physical approach to the design of long-wavelength photodiodes is proposed by using type II broken-gap heterostructures grown by liquid-phase epitaxy on GaSb substrates. The choice of sequence of the narrow-gap and wide-gap layers in the GaSb/InGaAsSb/GaInAsSb and GaSb/InGaAsSb/AlGaAsSb heterostructures allows one to vary the band energy diagram and barrier heights on the interface. Electrical and photoelectrical parameters of three kinds of devices were studied. A detectivity of D-lambda* = 4.1 x 10(8) cm Hz(1/2)/W was found at lambda = 4.7 mum, T = 300 K.
dc.identifier.citationMikhailova, M. P. (2002). "Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature". IEEE Proceedings Optoelectronics, 149(1), 41-44.
dc.identifier.endpage44
dc.identifier.issn1350-2433
dc.identifier.issue1
dc.identifier.scopus2-s2.0-0036476782
dc.identifier.startpage41
dc.identifier.urihttps://doi.org/10.1049/ip-opt:20020348
dc.identifier.urihttps://digital-library.theiet.org/content/journals/10.1049/ip-opt_20020348
dc.identifier.urihttp://hdl.handle.net/11452/28713
dc.identifier.volume149
dc.identifier.wos000175120700009
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherIEEE
dc.relation.collaborationYurt dışı
dc.relation.journalIEEE Proceedings-Optoelectronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectEmission
dc.subjectEngineering
dc.subjectOptics
dc.subjectTelecommunications
dc.subjectEnergy gap
dc.subjectThermodynamic equilibrium
dc.subjectPhotodiodes
dc.subjectBand bending
dc.subjectBand energy diagram
dc.subjectBarrier heights
dc.subjectCapacitance voltage characteristics
dc.subjectCarrier separation
dc.subjectHole concentration
dc.subjectLong wavelength photodiodes
dc.subjectPhotoelectrical parameters
dc.subjectSpectral response
dc.subjectSemiconductor growth
dc.subjectHeterojunctions
dc.subjectInterfaces (materials)
dc.subjectLattice constants
dc.subjectLiquid phase epitaxy
dc.subjectOhmic contacts
dc.subjectSemiconducting antimony compounds
dc.subjectSemiconducting indium compounds
dc.subjectSemiconductor device manufacture
dc.subjectSolid solutions
dc.subjectSubstrates
dc.subject.scopusSemiconductor Quantum Wells; Heterostructures; Photodiodes
dc.subject.wosEngineering, electrical & electronic
dc.subject.wosOptics
dc.subject.wosTelecommunications
dc.titleType IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature
dc.typeArticle
dc.wos.quartileQ2 (Telecommunications)
dc.wos.quartileQ4 (Optics)
dc.wos.quartileQ3 (Engineering, electrical & electronic)
dspace.entity.typePublication
local.contributor.departmentUludağ Üniversitesi
local.indexed.atScopus
local.indexed.atWOS

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