Yayın: Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature
Tarih
Kurum Yazarları
Afrailov, M. Ahmetoğlu
Yazarlar
Mikhailova, M. P.
Stoyanov, Nkolay
Andreychuk, O. V.
Moiseev, K. D.
Andreev, Igor
Yakovlev, Yu P.
Danışman
Dil
Türü
Yayıncı:
IEEE
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Özet
The authors present results of research and development of mid-infrared photodiodes based on antimonide solid solutions operating at room temperature in the spectral range of 1.5-4.8 mum. A new physical approach to the design of long-wavelength photodiodes is proposed by using type II broken-gap heterostructures grown by liquid-phase epitaxy on GaSb substrates. The choice of sequence of the narrow-gap and wide-gap layers in the GaSb/InGaAsSb/GaInAsSb and GaSb/InGaAsSb/AlGaAsSb heterostructures allows one to vary the band energy diagram and barrier heights on the interface. Electrical and photoelectrical parameters of three kinds of devices were studied. A detectivity of D-lambda* = 4.1 x 10(8) cm Hz(1/2)/W was found at lambda = 4.7 mum, T = 300 K.
Açıklama
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Konusu
Emission, Engineering, Optics, Telecommunications, Energy gap, Thermodynamic equilibrium, Photodiodes, Band bending, Band energy diagram, Barrier heights, Capacitance voltage characteristics, Carrier separation, Hole concentration, Long wavelength photodiodes, Photoelectrical parameters, Spectral response, Semiconductor growth, Heterojunctions, Interfaces (materials), Lattice constants, Liquid phase epitaxy, Ohmic contacts, Semiconducting antimony compounds, Semiconducting indium compounds, Semiconductor device manufacture, Solid solutions, Substrates
Alıntı
Mikhailova, M. P. (2002). "Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature". IEEE Proceedings Optoelectronics, 149(1), 41-44.