Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors
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Date
2015-09-01
Journal Title
Journal ISSN
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Publisher
Elsevier
Abstract
The frequency dependent irradiation influences on Sm2O3 MOS capacitors have been investigated and possible use of Sm2O3 in MOS-based radiation sensor was discussed in this study. To examine their gamma irradiation response over a range of doses, the fabricated MOS capacitors were irradiated up to 30 grays. Capacitance-Voltage (C-V) measurements were recorded for various doses and the influences of irradiation were determined from the mid-gap and flat-band voltage shifts. In addition, the degradations of irradiation have been studied by impedance based leakage current-voltage (J-V) characteristics. The results demonstrate that J-V characteristics have not been significantly change by irradiation and implying that the excited traps have a minor effect on current for given dose ranges. However, the frequency of applied voltage during. the C-V measurements affects the irradiation response of devices, significantly. The variations on the electrical characteristics may be attributed to the different time dependency of acceptor and donor-like interface states. In spite of the variations on the device characteristics, low frequency measurements indicate that Sm2O3 is a potential candidate to be used as a dielectric layer in MOS based irradiation sensors.
Description
Keywords
Interface states, Irradiation effects, Oxide trapped charges, Sm2O3 MOS capacitors, Interface-trap density, Electrical characteristics, Series resistance, Thin-films, Substrate, Oxides, Dielectrics, States, Layer, Instruments & instrumentation, Nuclear science & technology, Physics, Capacitance, Capacitors, Dielectric devices, Gamma rays, Interface states, Irradiation, Samarium compounds, Capacitance voltage measurements, Device characteristics, Electrical characteristic, Flat-band voltage shift, Gamma-ray irradiation, Irradiation effect, Low frequency measurements, Oxide trapped charge, MOS capacitors
Citation
Kaya, S. vd. (2015). "Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors". Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 358, 188-193.