Publication:
Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors

dc.contributor.authorKaya, Şenol
dc.contributor.authorYılmaz, Ercan
dc.contributor.authorKaraçalı, Hüseyin
dc.contributor.buuauthorKahraman, Ayşegül G.
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.orcid0000-0002-1836-7033
dc.contributor.researcheridAAH-6441-2021
dc.contributor.scopusid47161190600
dc.date.accessioned2022-06-13T07:01:54Z
dc.date.available2022-06-13T07:01:54Z
dc.date.issued2015-09-01
dc.description.abstractThe frequency dependent irradiation influences on Sm2O3 MOS capacitors have been investigated and possible use of Sm2O3 in MOS-based radiation sensor was discussed in this study. To examine their gamma irradiation response over a range of doses, the fabricated MOS capacitors were irradiated up to 30 grays. Capacitance-Voltage (C-V) measurements were recorded for various doses and the influences of irradiation were determined from the mid-gap and flat-band voltage shifts. In addition, the degradations of irradiation have been studied by impedance based leakage current-voltage (J-V) characteristics. The results demonstrate that J-V characteristics have not been significantly change by irradiation and implying that the excited traps have a minor effect on current for given dose ranges. However, the frequency of applied voltage during. the C-V measurements affects the irradiation response of devices, significantly. The variations on the electrical characteristics may be attributed to the different time dependency of acceptor and donor-like interface states. In spite of the variations on the device characteristics, low frequency measurements indicate that Sm2O3 is a potential candidate to be used as a dielectric layer in MOS based irradiation sensors.
dc.description.sponsorshipOrta Doğu teknik Üniversitesi
dc.description.sponsorshipAbant İzzet Baysal Üniversitesi (AİBÜ)
dc.description.sponsorshipAbant İzzet Baysal Üniversitesi (BAP. 2014.03.02.706)
dc.description.sponsorshipTürkiye Cumhuriyeti Kalkınma Bakanlığı (2012K120360)
dc.identifier.citationKaya, S. vd. (2015). "Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors". Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 358, 188-193.
dc.identifier.endpage193
dc.identifier.issn0168-583X
dc.identifier.scopus2-s2.0-84934783588
dc.identifier.startpage188
dc.identifier.urihttps://doi.org/10.1016/j.nimb.2015.06.037
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0168583X15005741
dc.identifier.urihttp://hdl.handle.net/11452/27079
dc.identifier.volume358
dc.identifier.wos000359170800030
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherElsevier
dc.relation.collaborationYurt içi
dc.relation.collaborationSanayi
dc.relation.journalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectInterface states
dc.subjectIrradiation effects
dc.subjectOxide trapped charges
dc.subjectSm2O3 MOS capacitors
dc.subjectInterface-trap density
dc.subjectElectrical characteristics
dc.subjectSeries resistance
dc.subjectThin-films
dc.subjectSubstrate
dc.subjectOxides
dc.subjectDielectrics
dc.subjectStates
dc.subjectLayer
dc.subjectInstruments & instrumentation
dc.subjectNuclear science & technology
dc.subjectPhysics
dc.subjectCapacitance
dc.subjectCapacitors
dc.subjectDielectric devices
dc.subjectGamma rays
dc.subjectInterface states
dc.subjectIrradiation
dc.subjectSamarium compounds
dc.subjectCapacitance voltage measurements
dc.subjectDevice characteristics
dc.subjectElectrical characteristic
dc.subjectFlat-band voltage shift
dc.subjectGamma-ray irradiation
dc.subjectIrradiation effect
dc.subjectLow frequency measurements
dc.subjectOxide trapped charge
dc.subjectMOS capacitors
dc.subject.scopusSchottky Diodes; Thermionic Emission; Electrical Properties
dc.subject.wosInstruments & instrumentation
dc.subject.wosNuclear science & technology
dc.subject.wosPhysics, atomic, molecular & chemical
dc.subject.wosPhysics, nuclear
dc.titleFrequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors
dc.typeArticle
dc.wos.quartileQ2 (Instruments & instrumentation)
dc.wos.quartileQ1 (Nuclear science & technology)
dc.wos.quartileQ3
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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