Publication: Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs
Date
Authors
Aydınlı, Atilla
Authors
Genç, M.
Sheremet, V. N.
Elçi, M.
Kasapoğlu, Ahmet Emre
Altuntaş, İsmail
Demir, İlkay
Eğin, G.
İslamoğlu, S.
Gür, Emre Y.
Muzafferoğlu, N.
Advisor
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Academic Press Ltd- Elsevier Science Ltd
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Volume Title
Abstract
This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Omega have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.
Description
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Keywords
Electric resistance, Physics, Electroluminescence, Light-emitting-diodes, Flip chip devices, Light emitting diodes, Gallium nitride, Series resistances, Iii-v semiconductors, Power out put, Light, Minimum value, Luminescence, Light emitting diode (leds), Ohmic contacts, Electroluminescence emission, Current distribution, Device configurations, Current injections
Citation
Aydınlı, A. vd. (2019). "Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs". Superlattices and Microstructures, 128, 9-13.