Publication:
Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

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dc.contributor.authorGenç, M.
dc.contributor.authorSheremet, V. N.
dc.contributor.authorElçi, M.
dc.contributor.authorKasapoğlu, Ahmet Emre
dc.contributor.authorAltuntaş, İsmail
dc.contributor.authorDemir, İlkay
dc.contributor.authorEğin, G.
dc.contributor.authorİslamoğlu, S.
dc.contributor.authorGür, Emre Y.
dc.contributor.authorMuzafferoğlu, N.
dc.contributor.authorElagöz, Sezai
dc.contributor.authorGülseren, Oğuz
dc.contributor.buuauthorAydınlı, Atilla
dc.contributor.departmentMühendislik Fakültesi
dc.contributor.departmentElektrik Elektronik Mühendisliği Bölümü
dc.contributor.researcheridABI-7535-2020
dc.contributor.scopusid7005432613
dc.date.accessioned2024-01-09T07:05:50Z
dc.date.available2024-01-09T07:05:50Z
dc.date.issued2019-01-08
dc.description.abstractThis paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Omega have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.
dc.identifier.citationAydınlı, A. vd. (2019). "Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs". Superlattices and Microstructures, 128, 9-13.
dc.identifier.endpage13
dc.identifier.issn0749-6036
dc.identifier.scopus2-s2.0-85060333837
dc.identifier.startpage9
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2019.01.008
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0749603618320330?via%3Dihub
dc.identifier.urihttps://hdl.handle.net/11452/38878
dc.identifier.volume128
dc.identifier.wos000463693300002
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherAcademic Press Ltd- Elsevier Science Ltd
dc.relation.collaborationYurt içi
dc.relation.collaborationSanayi
dc.relation.journalSuperlattices and Microstructures
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectElectric resistance
dc.subjectPhysics
dc.subjectElectroluminescence
dc.subjectLight-emitting-diodes
dc.subjectFlip chip devices
dc.subjectLight emitting diodes
dc.subjectGallium nitride
dc.subjectSeries resistances
dc.subjectIii-v semiconductors
dc.subjectPower out put
dc.subjectLight
dc.subjectMinimum value
dc.subjectLuminescence
dc.subjectLight emitting diode (leds)
dc.subjectOhmic contacts
dc.subjectElectroluminescence emission
dc.subjectCurrent distribution
dc.subjectDevice configurations
dc.subjectCurrent injections
dc.subject.scopusFlip Chip; Extraction Efficiency; Light Emitting Diodes
dc.subject.wosPhysics, condensed matter
dc.titleDistributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs
dc.typeArticle
dc.wos.quartileQ2 (Physics, Condensed Matter)
dc.wos.quartileQ3 (Physics, Condensed Matter)
dspace.entity.typePublication
local.contributor.departmentMühendislik Fakültesi/Elektrik Elektronik Mühendisliği Bölümü
local.indexed.atWOS
local.indexed.atScopus

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