Electrical properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with low diameter

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dc.contributor.authorAndreev, Igor A.
dc.contributor.authorKunitsyna, Ekaterina V.
dc.contributor.authorMikhaǐlova, Maya P.
dc.contributor.authorYakovlev, Yu P.
dc.contributor.buuauthorKucur, Banu
dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.departmentUludağ Üniversitesi/Fen Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.scopusid36903670200tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.date.accessioned2024-02-06T05:59:13Z
dc.date.available2024-02-06T05:59:13Z
dc.date.issued2014-02
dc.description.abstractGaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8,mu m wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100,mu m diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.en_US
dc.identifier.citationKucur, B. vd. (2014). "Electrical properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with low diameter". Acta Physica Polonica A, 125(2), 411-413.en_US
dc.identifier.endpage413tr_TR
dc.identifier.issn0587-4246
dc.identifier.issn1898-794X
dc.identifier.issue2tr_TR
dc.identifier.scopus2-s2.0-84896807200tr_TR
dc.identifier.startpage411tr_TR
dc.identifier.urihttps://doi.org/10.12693/APhysPolA.125.411
dc.identifier.urihttp://przyrbwn.icm.edu.pl/APP/PDF/125/a125z2p078.pdf
dc.identifier.urihttps://hdl.handle.net/11452/39537
dc.identifier.volume125tr_TR
dc.identifier.wos000339825400079
dc.indexed.pubmedPubMeden_US
dc.indexed.wosSCIEen_US
dc.indexed.wosCPCISen_US
dc.language.isoenen_US
dc.publisherPolish Acad Sciences Inst Physicsen_US
dc.relation.collaborationYurt dışıtr_TR
dc.relation.journalActa Physica Polonica Aen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectField effect transistorsen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectCurrent mechanismsen_US
dc.subjectWavelength regionsen_US
dc.subjectDiffusion currentsen_US
dc.subjectTunneling mechanismen_US
dc.subjectDouble heterostructuresen_US
dc.subjectLow temperature regionsen_US
dc.subjectGeneration-recombinationen_US
dc.subjectIntermediate temperaturesen_US
dc.subjectElectric propertiesen_US
dc.subject.scopusSemiconductor Quantum Wells; Indium Arsenide; Photodiodesen_US
dc.subject.wosPhysics, multidisciplinaryen_US
dc.titleElectrical properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with low diameteren_US
dc.typeArticleen_US
dc.wos.quartileQ4 (Physics, Multidisciplinary)en_US

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