Yayın: Electrical properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with low diameter
Dosyalar
Tarih
Kurum Yazarları
Kucur, Banu
Ahmetoğlu, Muhitdin A.
Yazarlar
Andreev, Igor A.
Kunitsyna, Ekaterina V.
Mikhaǐlova, Maya P.
Yakovlev, Yu P.
Danışman
Dil
Türü
Yayıncı:
Polish Acad Sciences Inst Physics
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Özet
GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8,mu m wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100,mu m diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.
Açıklama
Kaynak:
Anahtar Kelimeler:
Konusu
Field effect transistors, Optoelectronic devices, Current mechanisms, Wavelength regions, Diffusion currents, Tunneling mechanism, Double heterostructures, Low temperature regions, Generation-recombination, Intermediate temperatures, Electric properties
Alıntı
Kucur, B. vd. (2014). "Electrical properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with low diameter". Acta Physica Polonica A, 125(2), 411-413.