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Electrical and optical characteristics of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.24AsSb heterostructure photodiode

dc.contributor.authorAhmetoglu, M.
dc.contributor.authorKucur, B.
dc.contributor.authorAndreev, I. A.
dc.contributor.authorKunitsyna, E. V.
dc.contributor.authorMikhailova, M. P.
dc.contributor.authorYakovlev, Y. P.
dc.contributor.buuauthorAHMETOĞLU, MUHİTDİN
dc.contributor.buuauthorKucur, Banu
dc.contributor.departmentFen-Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.scopusid 16021109400
dc.contributor.scopusid36903670200
dc.date.accessioned2025-05-13T10:02:56Z
dc.date.issued2015-04-01
dc.description.abstractIn the present paper, electrical and optical properties of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.
dc.identifier.doi10.12693/APhysPolA.127.1007
dc.identifier.endpage1009
dc.identifier.issn0587-4246
dc.identifier.issue4
dc.identifier.scopus2-s2.0-84938862756
dc.identifier.startpage1007
dc.identifier.urihttps://hdl.handle.net/11452/52415
dc.identifier.volume127
dc.indexed.scopusScopus
dc.language.isoen
dc.publisherPolish Academy of Sciences
dc.relation.journalActa Physica Polonica A
dc.rightsinfo:eu-repo/semantics/openAccess
dc.titleElectrical and optical characteristics of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.24AsSb heterostructure photodiode
dc.typeconferenceObject
dc.type.subtypeConference Paper
dspace.entity.typePublication
local.contributor.departmentFen-Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
relation.isAuthorOfPublication243af714-a388-4a64-b1dd-ce4024cdf289
relation.isAuthorOfPublication.latestForDiscovery243af714-a388-4a64-b1dd-ce4024cdf289

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