Yayın: Electrical and optical characteristics of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.24AsSb heterostructure photodiode
Dosyalar
Tarih
Kurum Yazarları
Kucur, Banu
Yazarlar
Ahmetoglu, M.
Kucur, B.
Andreev, I. A.
Kunitsyna, E. V.
Mikhailova, M. P.
Yakovlev, Y. P.
Danışman
Dil
Türü
Yayıncı:
Polish Academy of Sciences
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Özet
In the present paper, electrical and optical properties of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.