Yayın:
Structural, optical and electrical properties of Al/SnO2/p-Si MIS diodes

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dc.contributor.buuauthorTaysioğlu, Aslı Ayten
dc.contributor.buuauthorErtürk, Kadir
dc.contributor.buuauthorBektöre, Yüksel
dc.contributor.buuauthorHacıismailoglu, Muhammed Cüneyt
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.orcid0000-0002-0781-3376
dc.contributor.researcheridABA-5148-2020
dc.contributor.researcheridK-7950-2012
dc.contributor.scopusid18038658800
dc.contributor.scopusid18036952100
dc.contributor.scopusid8975743400
dc.contributor.scopusid8975743500
dc.date.accessioned2024-03-05T11:04:53Z
dc.date.available2024-03-05T11:04:53Z
dc.date.issued2007
dc.descriptionBu çalışma, 22-26, Ağustos 2006 tarihlerinde İstanbul[Türkiye]’de düzenlenen 6. International Conference of the Balkan-Physical-Union Kongresi‘nde bildiri olarak sunulmuştur.
dc.description.abstractThe absorption-wavelength, basis absorption spectrum and the Current- Voltage (I-V) characteristics of Al / SnO2 / p-Si (MIS) Schottky Diodes prepared by means of spray Pyrolysis method have been measured at 300 K. To possess information about the optical properties of Al / SnO2 / p-Si (MIS) Schottky diode optical absorptions, optical transmittance, band-gap and Urbach Parameter were investigated. The diode structures were studied by X-Ray diffraction. X-Ray diffraction studies showed that the crystallite size and prefential growth directions of diode.
dc.description.sponsorshipBalkan Fizik Birliği
dc.description.sponsorshipTürk Fizik Derneği
dc.description.sponsorshipİstanbul Üniversitesi
dc.description.sponsorshipYıldız Teknik Üniversitesi
dc.description.sponsorshipBoğaziçi Üniversitesi
dc.description.sponsorshipDoğuş Üniversitesi
dc.description.sponsorshipEuropean Phys Soc
dc.description.sponsorshipİstanbul Büyükşehir Belediyesi
dc.description.sponsorshipTürk Atom Enerjisi
dc.description.sponsorshipUnited Natl Educ Sci & Cultutal Org
dc.description.sponsorshipNel Elektronik
dc.description.sponsorshipBilim ve Teknoloji Araştırma Derneği
dc.identifier.citationTaysioglu, A. A. vd. (2007). "Structural, optical and electrical properties of Al/SnO2/p-Si MIS diodes". AIP Conference Proceedings, 6. International Conference of the Balkan-Physical-Union, 899, 586-586.
dc.identifier.endpage586
dc.identifier.isbn978-0-7354-0404-5
dc.identifier.issn0094-243X
dc.identifier.scopus2-s2.0-34547451114
dc.identifier.startpage586
dc.identifier.urihttps://hdl.handle.net/11452/40215
dc.identifier.volume899
dc.identifier.wos000246647900300
dc.indexed.wosCPCIS
dc.language.isoen
dc.publisherAmer Inst Physics
dc.relation.journalAIP Conference Proceedings, 6. International Conference of the Balkan-Physical-Union
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMIS diodes
dc.subjectSpray pyrolysis
dc.subjectPhysics
dc.subject.scopusPhotodetectors; Ultraviolet Detectors; Zinc Oxide
dc.subject.wosPhysics, multidisciplinary
dc.titleStructural, optical and electrical properties of Al/SnO2/p-Si MIS diodes
dc.typeconferenceObject
dc.type.subtypeProceedings Paper
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atWOS
local.indexed.atScopus

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