Yayın: Structural, optical and electrical properties of Al/SnO2/p-Si MIS diodes
Tarih
Kurum Yazarları
Taysioğlu, Aslı Ayten
Ertürk, Kadir
Bektöre, Yüksel
Hacıismailoglu, Muhammed Cüneyt
Yazarlar
Danışman
Dil
Türü
Yayıncı:
Amer Inst Physics
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Özet
The absorption-wavelength, basis absorption spectrum and the Current- Voltage (I-V) characteristics of Al / SnO2 / p-Si (MIS) Schottky Diodes prepared by means of spray Pyrolysis method have been measured at 300 K. To possess information about the optical properties of Al / SnO2 / p-Si (MIS) Schottky diode optical absorptions, optical transmittance, band-gap and Urbach Parameter were investigated. The diode structures were studied by X-Ray diffraction. X-Ray diffraction studies showed that the crystallite size and prefential growth directions of diode.
Açıklama
Bu çalışma, 22-26, Ağustos 2006 tarihlerinde İstanbul[Türkiye]’de düzenlenen 6. International Conference of the Balkan-Physical-Union Kongresi‘nde bildiri olarak sunulmuştur.
Kaynak:
Anahtar Kelimeler:
Konusu
MIS diodes, Spray pyrolysis, Physics
Alıntı
Taysioglu, A. A. vd. (2007). "Structural, optical and electrical properties of Al/SnO2/p-Si MIS diodes". AIP Conference Proceedings, 6. International Conference of the Balkan-Physical-Union, 899, 586-586.