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InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors

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dc.contributor.authorSheremet, V.
dc.contributor.authorGheshlaghi, N.
dc.contributor.authorSözen, M.
dc.contributor.authorElçi, M.
dc.contributor.authorSheremet N.
dc.contributor.authorAltuntaş, İsmail
dc.contributor.authorDing, Kai
dc.contributor.authorAvrutin, Vitaliy
dc.contributor.authorÖzgür, Ümit
dc.contributor.authorMorkoç̌, Hadis
dc.contributor.buuauthorAydınlı, Atilla
dc.contributor.departmentMühendislik Fakültesi
dc.contributor.departmentElektrik Elektronik Mühendisliği Bölümü
dc.contributor.orcid0000-0001-5952-5993
dc.contributor.researcheridABI-7535-2020
dc.contributor.scopusid7005432613
dc.date.accessioned2024-01-16T08:02:21Z
dc.date.available2024-01-16T08:02:21Z
dc.date.issued2018-04
dc.description.abstractWe investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%.
dc.identifier.citationSheremet, V. vd. (2018). ''InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors''. Superlattices and Microstructures, 116, 253-261.
dc.identifier.doi10.1016/j.spmi.2018.02.002
dc.identifier.endpage261
dc.identifier.issn0749-6036
dc.identifier.scopus2-s2.0-85042775171
dc.identifier.startpage253
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0749603618302222?via%3Dihub
dc.identifier.urihttps://hdl.handle.net/11452/39053
dc.identifier.volume116
dc.identifier.wos000430037600030
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherAcademic Press Ltd Elsevier Science Ltd
dc.relation.collaborationYurt içi
dc.relation.collaborationYurt dışı
dc.relation.journalSuperlattices and Microstructures
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.relation.tubitak113G042
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectPhysics
dc.subjectLight-emitting diode
dc.subjectStep-graded electron injector
dc.subjectStress compensation layer
dc.subjectInGaN/GaN
dc.subjectLight-emitting-diodes
dc.subjectQuantum-wells
dc.subjectEfficiency
dc.subjectEmission
dc.subjectRecombination
dc.subjectLocalization
dc.subjectLuminescence
dc.subjectDynamics
dc.subjectOrigin
dc.subjectElectron injection
dc.subjectElectrons; III-V semiconductors
dc.subjectIndium alloys
dc.subjectLight emitting diodes
dc.subjectSemiconductor quantum wells
dc.subjectElectron injectors
dc.subjectMultiple quantum-well structures
dc.subjectPhotoluminescence measurements
dc.subjectRadiant intensities
dc.subjectStress compensation
dc.subjectStructural improvements
dc.subjectUniform distribution
dc.subjectGallium alloys
dc.subject.scopusIngan; Light Emitting Diodes; Semiconductor Quantum Wells
dc.subject.wosPhysics, condensed matter
dc.titleInGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors
dc.typeArticle
dc.wos.quartileQ2 (Physics, condensed matter)
dspace.entity.typePublication
local.contributor.departmentMühendislik Fakültesi/Elektrik Elektronik Mühendisliği Bölümü
local.indexed.atPubMed
local.indexed.atScopus

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