Yayın: InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors
Tarih
Kurum Yazarları
Aydınlı, Atilla
Yazarlar
Sheremet, V.
Gheshlaghi, N.
Sözen, M.
Elçi, M.
Sheremet N.
Altuntaş, İsmail
Ding, Kai
Avrutin, Vitaliy
Özgür, Ümit
Morkoç̌, Hadis
Danışman
Dil
Türü
Yayıncı:
Academic Press Ltd Elsevier Science Ltd
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Özet
We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%.
Açıklama
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Konusu
Physics, Light-emitting diode, Step-graded electron injector, Stress compensation layer, InGaN/GaN, Light-emitting-diodes, Quantum-wells, Efficiency, Emission, Recombination, Localization, Luminescence, Dynamics, Origin, Electron injection, Electrons; III-V semiconductors, Indium alloys, Light emitting diodes, Semiconductor quantum wells, Electron injectors, Multiple quantum-well structures, Photoluminescence measurements, Radiant intensities, Stress compensation, Structural improvements, Uniform distribution, Gallium alloys
Alıntı
Sheremet, V. vd. (2018). ''InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors''. Superlattices and Microstructures, 116, 253-261.