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The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs Schottky barrier diode

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dc.contributor.buuauthorAhmetoglu (Afrailov), Muhitdin
dc.contributor.buuauthorKırsoy, Ahmet
dc.contributor.buuauthorAsimov, A.
dc.contributor.buuauthorKucur, Banu
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.researcheridCBY-1915-2022
dc.contributor.researcheridCCC-9142-2022
dc.contributor.researcheridFDX-3050-2022
dc.contributor.researcheridCZA-5782-2022
dc.contributor.scopusid55849025200
dc.contributor.scopusid56716481600
dc.contributor.scopusid55849632800
dc.contributor.scopusid36903670200
dc.date.accessioned2023-07-25T08:40:37Z
dc.date.available2023-07-25T08:40:37Z
dc.date.issued2016-11-25
dc.description.abstractWe fabricated the Au/Meh-PPV:PCBM/n-type GaAs Schottky barrier diodes (SBDs). Then we investigated Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diode at room temperature. MEH-PPV:PCBM (in a mass ratio 1:4) used as interfacial layer between metal and semiconductor layers. Here, MEH-PPV is poly [2-methoxy-5-(ethylhexyloxy)1,4-phenylenevinylene] and PCBM is [6,6]-phenyl-61C-butric acid methyl ester). SBD parameters such as ideality factor, barrier height and series resistance were obtained from I-V and C-V measurements. Also, Cheung functions and Norde Method were used to evaluate the I-V characteristics and to determine the characteristic parameters of the Schottky diode. The diode parameters such as ideality factor, barrier heights and series resistance were found as 4.39-4.54 and 0.57-0.63 eV and 51-53 Omega respectively. Also the interface states energy distribution of the diode was determined and found as 1.09 x 10(12) ev(-1)cm(-2)at (Ec-0.352) eV to 2.94 x 10(11) eV(-1)crn(-2) at (Ec-0.436) eV.
dc.identifier.citationAhmetoğlu (Afrailov), M. vd. (2016). "The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs Schottky barrier diode". Optoelectronics and Advanced Materials, Rapid Communications, 10(11-12), 825-830.
dc.identifier.endpage830
dc.identifier.issn1842-6573
dc.identifier.issn2065-3824
dc.identifier.issue11-12
dc.identifier.pubmed27221456
dc.identifier.scopus2-s2.0-85008698160
dc.identifier.startpage825
dc.identifier.urihttp://hdl.handle.net/11452/33266
dc.identifier.volume10
dc.identifier.wos000391777900008
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherNational Institute of Optoelectronics
dc.relation.journalOptoelectronics and Advanced Materials, Rapid Communications
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMaterials science
dc.subjectOptics
dc.subjectSchottky barrier diode
dc.subjectSeries resistance
dc.subjectIdeality factor
dc.subjectConducting polymers
dc.subjectState density distributions
dc.subjectElectronic parameters
dc.subjectV characteristics
dc.subjectCurrent-voltage
dc.subjectC-V
dc.subjectInterface states
dc.subjectI-V
dc.subjectMechanism
dc.subjectPPV
dc.subjectCapacitance
dc.subjectElectric resistance
dc.subjectGallium arsenide
dc.subjectGold compounds
dc.subjectIII-V semiconductors
dc.subjectInterface states
dc.subjectSemiconducting gallium
dc.subjectSemiconductor diodes
dc.subjectCapacitance-voltage characteristics
dc.subjectEnergy distributions
dc.subjectIdeality factors
dc.subjectInterfacial layer
dc.subjectIV characteristics
dc.subjectSchottky barrier diodes (SBDs)
dc.subjectSemiconductor layers
dc.subjectSeries resistances
dc.subjectSchottky barrier diodes
dc.subject.scopusSchottky Diodes; Thermionic Emission; Electrical Properties
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosOptics
dc.titleThe electrical properties of Au/MEH-PPV:PCBM/n-type GaAs Schottky barrier diode
dc.typeArticle
dc.wos.quartileQ4
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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