Yayın: The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs Schottky barrier diode
Tarih
Kurum Yazarları
Ahmetoglu (Afrailov), Muhitdin
Kırsoy, Ahmet
Asimov, A.
Kucur, Banu
Yazarlar
Danışman
Dil
Türü
Yayıncı:
National Institute of Optoelectronics
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Özet
We fabricated the Au/Meh-PPV:PCBM/n-type GaAs Schottky barrier diodes (SBDs). Then we investigated Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diode at room temperature. MEH-PPV:PCBM (in a mass ratio 1:4) used as interfacial layer between metal and semiconductor layers. Here, MEH-PPV is poly [2-methoxy-5-(ethylhexyloxy)1,4-phenylenevinylene] and PCBM is [6,6]-phenyl-61C-butric acid methyl ester). SBD parameters such as ideality factor, barrier height and series resistance were obtained from I-V and C-V measurements. Also, Cheung functions and Norde Method were used to evaluate the I-V characteristics and to determine the characteristic parameters of the Schottky diode. The diode parameters such as ideality factor, barrier heights and series resistance were found as 4.39-4.54 and 0.57-0.63 eV and 51-53 Omega respectively. Also the interface states energy distribution of the diode was determined and found as 1.09 x 10(12) ev(-1)cm(-2)at (Ec-0.352) eV to 2.94 x 10(11) eV(-1)crn(-2) at (Ec-0.436) eV.
Açıklama
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Konusu
Materials science, Optics, Schottky barrier diode, Series resistance, Ideality factor, Conducting polymers, State density distributions, Electronic parameters, V characteristics, Current-voltage, C-V, Interface states, I-V, Mechanism, PPV, Capacitance, Electric resistance, Gallium arsenide, Gold compounds, III-V semiconductors, Interface states, Semiconducting gallium, Semiconductor diodes, Capacitance-voltage characteristics, Energy distributions, Ideality factors, Interfacial layer, IV characteristics, Schottky barrier diodes (SBDs), Semiconductor layers, Series resistances, Schottky barrier diodes
Alıntı
Ahmetoğlu (Afrailov), M. vd. (2016). "The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs Schottky barrier diode". Optoelectronics and Advanced Materials, Rapid Communications, 10(11-12), 825-830.