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The determination of electronic parameters of Al/MDMO-PPV/p-Si/Al Schottky diode by current-voltage characteristics

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dc.contributor.buuauthorAsimov, A.
dc.contributor.buuauthorAhmetoğlu, Afrailov M.
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.scopusid55849632800
dc.contributor.scopusid55849025200
dc.date.accessioned2024-02-16T06:11:31Z
dc.date.available2024-02-16T06:11:31Z
dc.date.issued2014-09
dc.description.abstractCurrent-voltage (I-V) characteristics of Al/MDMO-PPV/p-Si (111) Schottky barrier diodes (SBDs) have been investigated at room temperature. Here, (MDMO-PPV) poly-[2-(3,7-dimethyloctyloxy)-5-methyloxy]-para-phenylene-vinylene has been used as interfacial layer between metal and semiconductor layers. The characteristic parameters of the structure such as barrier height, ideality factor, interface states density and series resistance were determined from the electrical measurements. Also, Cheung functions and Norde method were used to evaluate the I-V characteristics and to obtain the characteristic parameters of the Schottky contact. The diode parameters such as ideality factor, barrier heights and interface state density, series resistance were found as 1,73-1,93 and 0,89-0,79 eV and 1,11x10(12) eV(-1) cm(-2) at (1,09-E-v) eV to 9,91x10(14) eV(-1) cm(-2) at (0,87-E-v) eV respectively. The series resistance R-s values were determined from dV/dIn I-I and H(I)-I plots and were found to be 9,2x10(3) k Omega and 10,1x10(3) k Omega respectively
dc.identifier.citationAsimov, A. ve Ahmetoğlu, M. A. (2014). "The determination of electronic parameters of Al/MDMO-PPV/p-Si/Al Schottky diode by current-voltage characteristics". Optoelectronics and Advanced Materials, Rapid Communications, 8(9-10), 975-979.
dc.identifier.eissn2065-3824
dc.identifier.endpage979
dc.identifier.issn1842-6573
dc.identifier.issue9-10
dc.identifier.scopus2-s2.0-84914167316
dc.identifier.startpage975
dc.identifier.urihttps://hdl.handle.net/11452/39787
dc.identifier.volume8
dc.identifier.wos000343844700033
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.journalOptoelectronics and Advanced Materials, Rapid Communications
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectBarrier height
dc.subjectSchottky barrier diode
dc.subjectConducting polymers
dc.subjectMDMO-PPV
dc.subjectIdealityfactor
dc.subjectConducting polymers
dc.subjectCurrent voltage characteristics
dc.subjectSemiconductor diodes
dc.subjectElectric resistance
dc.subjectInterface states
dc.subjectElectric variables measurement
dc.subjectBarrier heights
dc.subjectElectrical measurement
dc.subjectSchottky barrier diodes (SBDs)
dc.subjectIdealityfactor
dc.subjectPara-phenylene vinylenes
dc.subjectInterface state density
dc.subjectMDMO-PPV
dc.subjectInterface states density
dc.subjectSchottky barrier diodes
dc.subjectElectrical characteristics
dc.subjectPlot
dc.subjectBarrier diodes
dc.subjectLayer
dc.subjectThin-film
dc.subjectJunction
dc.subjectMaterials science
dc.subjectOptics
dc.subject.scopusSchottky Diodes; Thermionic Emission; Electrical Properties
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosOptics
dc.titleThe determination of electronic parameters of Al/MDMO-PPV/p-Si/Al Schottky diode by current-voltage characteristics
dc.typeArticle
dc.wos.quartileQ4
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atWOS
local.indexed.atScopus

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