Yayın: The determination of electronic parameters of Al/MDMO-PPV/p-Si/Al Schottky diode by current-voltage characteristics
Tarih
Kurum Yazarları
Asimov, A.
Ahmetoğlu, Afrailov M.
Yazarlar
Danışman
Dil
Türü
Yayıncı:
Natl Inst Optoelectronics
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Özet
Current-voltage (I-V) characteristics of Al/MDMO-PPV/p-Si (111) Schottky barrier diodes (SBDs) have been investigated at room temperature. Here, (MDMO-PPV) poly-[2-(3,7-dimethyloctyloxy)-5-methyloxy]-para-phenylene-vinylene has been used as interfacial layer between metal and semiconductor layers. The characteristic parameters of the structure such as barrier height, ideality factor, interface states density and series resistance were determined from the electrical measurements. Also, Cheung functions and Norde method were used to evaluate the I-V characteristics and to obtain the characteristic parameters of the Schottky contact. The diode parameters such as ideality factor, barrier heights and interface state density, series resistance were found as 1,73-1,93 and 0,89-0,79 eV and 1,11x10(12) eV(-1) cm(-2) at (1,09-E-v) eV to 9,91x10(14) eV(-1) cm(-2) at (0,87-E-v) eV respectively. The series resistance R-s values were determined from dV/dIn I-I and H(I)-I plots and were found to be 9,2x10(3) k Omega and 10,1x10(3) k Omega respectively
Açıklama
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Konusu
Barrier height, Schottky barrier diode, Conducting polymers, MDMO-PPV, Idealityfactor, Conducting polymers, Current voltage characteristics, Semiconductor diodes, Electric resistance, Interface states, Electric variables measurement, Barrier heights, Electrical measurement, Schottky barrier diodes (SBDs), Idealityfactor, Para-phenylene vinylenes, Interface state density, MDMO-PPV, Interface states density, Schottky barrier diodes, Electrical characteristics, Plot, Barrier diodes, Layer, Thin-film, Junction, Materials science, Optics
Alıntı
Asimov, A. ve Ahmetoğlu, M. A. (2014). "The determination of electronic parameters of Al/MDMO-PPV/p-Si/Al Schottky diode by current-voltage characteristics". Optoelectronics and Advanced Materials, Rapid Communications, 8(9-10), 975-979.