Publication:
Electrical characteristics and temperature dependence of photovoltaic parameters of GaInAsSb based TPV diode

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dc.contributor.authorAndreev, Iereus Alexey
dc.contributor.authorKunitsyna, Ekaterina V.
dc.contributor.authorMikhailova, Maya P.
dc.contributor.authorYakovlev, Yury P.
dc.contributor.buuauthorKucur, Banu
dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.researcheridCZA-5782-2022
dc.contributor.researcheridCCC-9142-2022
dc.contributor.scopusid36903670200
dc.contributor.scopusid16021109400
dc.date.accessioned2024-01-09T05:56:44Z
dc.date.available2024-01-09T05:56:44Z
dc.date.issued2016-04
dc.descriptionBu çalışma, 16-19, Nisan 2015 tarihlerinde Ölüdeniz[Türkiye]’de düzenlenen 5. International Advances in Applied Physics and Materials Science Congress and Exhibition (APMAS) Kongresi‘nde bildiri olarak sunulmuştur.
dc.description.abstractIn this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current (I-sc) and open circuit voltage (V-oc). Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.
dc.identifier.citationKucur, B. vd. (2016). "Electrical characteristics and temperature dependence of photovoltaic parameters of GaInAsSb based TPV diode". Acta Physica Polonica A, 129(4), Special Issue SI, 767-769.
dc.identifier.endpage769
dc.identifier.issn0587-4246
dc.identifier.issn1898-794X
dc.identifier.issue4, Special Issue SI
dc.identifier.scopus2-s2.0-84971482937
dc.identifier.startpage767
dc.identifier.urihttps://doi.org/10.12693/APhysPolA.129.767
dc.identifier.urihttp://przyrbwn.icm.edu.pl/APP/PDF/129/a129z4p089.pdf
dc.identifier.urihttps://hdl.handle.net/11452/38854
dc.identifier.volume129
dc.identifier.wos000376595000090
dc.indexed.wosSCIE
dc.indexed.wosCPCIS
dc.language.isoen
dc.publisherPolish Acad Sciences Inst Physics
dc.relation.collaborationYurt dışı
dc.relation.journalActa Physica Polonica A
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectPhysics
dc.subjectCurrent voltage characteristics
dc.subjectOpen circuit voltage
dc.subjectCurrent mechanisms
dc.subjectElectrical characteristic
dc.subjectElectrical characterization
dc.subjectLight intensity
dc.subjectLow bandgap
dc.subjectPhotovoltaic parameters
dc.subjectTemperature dependence
dc.subjectThermophotovoltaics
dc.subjectTemperature distribution
dc.subject.scopusHeat Emissions; Hot Temperature; Emitters (Equipment)
dc.subject.wosPhysics, multidisciplinary
dc.titleElectrical characteristics and temperature dependence of photovoltaic parameters of GaInAsSb based TPV diode
dc.typeArticle
dc.wos.quartileQ4 (Physics, multidisciplinary)
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atPubMed
local.indexed.atScopus

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