Publication: Electrical characteristics and temperature dependence of photovoltaic parameters of GaInAsSb based TPV diode
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Authors
Kucur, Banu
Ahmetoğlu, Muhitdin
Authors
Andreev, Iereus Alexey
Kunitsyna, Ekaterina V.
Mikhailova, Maya P.
Yakovlev, Yury P.
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Polish Acad Sciences Inst Physics
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Abstract
In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current (I-sc) and open circuit voltage (V-oc). Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.
Description
Bu çalışma, 16-19, Nisan 2015 tarihlerinde Ölüdeniz[Türkiye]’de düzenlenen 5. International Advances in Applied Physics and Materials Science Congress and Exhibition (APMAS) Kongresi‘nde bildiri olarak sunulmuştur.
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Keywords
Physics, Current voltage characteristics, Open circuit voltage, Current mechanisms, Electrical characteristic, Electrical characterization, Light intensity, Low bandgap, Photovoltaic parameters, Temperature dependence, Thermophotovoltaics, Temperature distribution
Citation
Kucur, B. vd. (2016). "Electrical characteristics and temperature dependence of photovoltaic parameters of GaInAsSb based TPV diode". Acta Physica Polonica A, 129(4), Special Issue SI, 767-769.