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The electrical properties of Au/P3HT/n-GaAs Schottky Barrier Diode

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dc.contributor.buuauthorKirsoy, Ahmet
dc.contributor.buuauthorAhmetoğlu, M. (Afrailov)
dc.contributor.buuauthorAsimov, A.
dc.contributor.buuauthorKucur, B.
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.researcheridFDX-3050-2022
dc.contributor.researcheridCCC-9142-2022
dc.contributor.researcheridJKH-6966-2023
dc.contributor.researcheridCZA-5782-2022
dc.contributor.scopusid56716481600
dc.contributor.scopusid55153359100
dc.contributor.scopusid55849632800
dc.contributor.scopusid36903670200
dc.date.accessioned2024-02-15T11:24:50Z
dc.date.available2024-02-15T11:24:50Z
dc.date.issued2015-08
dc.descriptionBu çalışma, 25-29 Ekim 2014 tarihleri arasında Antalya[Türkiye]’da düzenlenen International Conference on Computational and Experimental Science and Engineering (ICCESEN)’da bildiri olarak sunulmuştur.
dc.description.abstractIn this study, we investigated the electrical properties of the Au/P3HT/n-GaAs Schottky diode at room temperature by using current-voltage method. The values of ideality factor and barrier height of the diode were found to be 2.45 and 0.85 eV, respectively. n ideality factor greater than unity indicates that the diode exhibits non-ideal current-voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. These values were also determined from the Cheung functions and the Norde method due to the non-ideal behavior of the diode and it was seen that there was an agreement with series resistance. Also the interface states energy distribution of the diode was determined from the forward bias I-V measurements by taking into account the bias dependence of the effective barrier height. The obtained electrical parameters of the Au/P3HT/n-GaAs Schottky diode are higher than that of the conventional Au/n-GaAs Schottky diodes.
dc.identifier.citationKirsoy, A. vd. (2015). "The electrical properties of Au/P3HT/n-GaAs schottky barrier diode". Acta Physica Polonica A, 128(2B), B170-B173.
dc.identifier.doi10.12693/APhysPolA.128.B-170
dc.identifier.endpageB173
dc.identifier.issn0587-4246
dc.identifier.issue2B
dc.identifier.scopus2-s2.0-84947742374
dc.identifier.startpageB170
dc.identifier.urihttps://doi.org/10.12693/APhysPolA.128.B-170
dc.identifier.urihttp://przyrbwn.icm.edu.pl/APP/PDF/128/a128z2bp046.pdf
dc.identifier.urihttps://hdl.handle.net/11452/39771
dc.identifier.volume128
dc.identifier.wos000363011700046
dc.indexed.scopusScopus
dc.indexed.wosSCIE
dc.indexed.wosCPCIS
dc.language.isoen
dc.publisherPolish Acad Sciences Inst Physics
dc.relation.journalActa Physica Polonica A
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectPhysics
dc.subjectV characteristics
dc.subjectC-V
dc.subjectSeries resistance
dc.subjectInterface states
dc.subjectCurrent-voltage
dc.subjectI-V
dc.subjectParameters
dc.subjectBias voltage
dc.subjectElectric resistance
dc.subjectInterface states
dc.subjectSchottky barrier diodes
dc.subjectCurrent voltage
dc.subjectEffective barrier heights
dc.subjectElectrical parameter
dc.subjectEnergy distributions
dc.subjectI-V measurements
dc.subjectIdeality factors
dc.subjectInterfacial layer
dc.subjectSeries resistances
dc.subjectDiodes
dc.subject.scopusSchottky diodes; Thermionic emission; Electrical properties
dc.subject.wosPhysics, multidisciplinary
dc.titleThe electrical properties of Au/P3HT/n-GaAs Schottky Barrier Diode
dc.typeconferenceObject
dc.type.subtypeProceedings Paper
dc.wos.quartileQ4
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atWOS
local.indexed.atScopus

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