Yayın: The electrical properties of Au/P3HT/n-GaAs Schottky Barrier Diode
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Tarih
Kurum Yazarları
Kirsoy, Ahmet
Ahmetoğlu, M. (Afrailov)
Asimov, A.
Kucur, B.
Yazarlar
Danışman
Dil
Türü
Yayıncı:
Polish Acad Sciences Inst Physics
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Özet
In this study, we investigated the electrical properties of the Au/P3HT/n-GaAs Schottky diode at room temperature by using current-voltage method. The values of ideality factor and barrier height of the diode were found to be 2.45 and 0.85 eV, respectively. n ideality factor greater than unity indicates that the diode exhibits non-ideal current-voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. These values were also determined from the Cheung functions and the Norde method due to the non-ideal behavior of the diode and it was seen that there was an agreement with series resistance. Also the interface states energy distribution of the diode was determined from the forward bias I-V measurements by taking into account the bias dependence of the effective barrier height. The obtained electrical parameters of the Au/P3HT/n-GaAs Schottky diode are higher than that of the conventional Au/n-GaAs Schottky diodes.
Açıklama
Bu çalışma, 25-29 Ekim 2014 tarihleri arasında Antalya[Türkiye]’da düzenlenen International Conference on Computational and Experimental Science and Engineering (ICCESEN)’da bildiri olarak sunulmuştur.
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Konusu
Physics, V characteristics, C-V, Series resistance, Interface states, Current-voltage, I-V, Parameters, Bias voltage, Electric resistance, Interface states, Schottky barrier diodes, Current voltage, Effective barrier heights, Electrical parameter, Energy distributions, I-V measurements, Ideality factors, Interfacial layer, Series resistances, Diodes
Alıntı
Kirsoy, A. vd. (2015). "The electrical properties of Au/P3HT/n-GaAs schottky barrier diode". Acta Physica Polonica A, 128(2B), B170-B173.