Electrical and optical properties of photodiode structures formed by surface polymerization of P(Egdma-Vpca)-Swcnt films on n-si

Abstract

Poly (ethylene glycol dimethacrylate-1-vinyl-1H-pyrrole-2-carboxylic acid)/carbon nanotube, single-walled)/n-Si ([P(EGDMA-VPCA)-SWCNT]/n-Si) photodiode structures was fabricated by using surface polymerization method. While electrical properties were measured at different temperatures, optical properties were measured at room temperatures. Dark and light current characteristics were investigated. Spectral photoresponse measurements of the structure were realized at room temperature. They showed that the fabricated structure exhibited rectification behavior, which makes it a good nominee for optoelectronic implementation area.