Person: KAPLAN, HÜSEYİN KAAN
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KAPLAN
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HÜSEYİN KAAN
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Publication P-type transparent Cu2S thin film grown by thermionic vacuum arc for optoelectronic applications(Elsevier, 2021-01-01) Kaplan, Hüseyin Kaan; Akay, Sertan Kemal; Pat, Suat; Henini, Mohamed; KAPLAN, HÜSEYİN KAAN; AKAY, SERTAN KEMAL; 0000-0001-9414-8492; R-7260-2016; GWV-7916-2022In this study, we have used a new single-step method for producing Cu2S thin films, which have good transparency in the visible range and high hole conductivity properties suitable for a wide range of optoelectronic device applications. Cu2S thin films are deposited by the Thermionic Vacuum Arc method, which is capable of very high deposition rates with high uniformity. The structural properties were determined by XRD analysis, and the morphological features were examined by AFM and SEM techniques. From XRD studies, the thin films were found to have a nano-crystalline form. The morphology images showed that the thin films have very low surface roughness. The bandgap of the film was calculated. The electrical properties of the films such as resistivity, majority carrier, and concentration were determined by Hall Effect measurements. In addition, the figure of merit value was calculated for p-type Cu2S transparent conducting thin films using the Haacke's formula.Publication Electrical and optical properties of photodiode structures formed by surface polymerization of P(Egdma-Vpca)-Swcnt films on n-si(Elsevier, 2019-06-20) Kirezli, B.; Gücüyener, İsmet; Kara, A.; Kaplan, H. K.; Afrailov, Muhitdin Ahmetoğlu; Kirezli, B.; GÜCÜYENER, İSMET; KARA, ALİ; KAPLAN, HÜSEYİN KAAN; Afrailov, Muhitdin Ahmetoglu; Fen Edebiyat Fakültesi; Fizik Bölümü; 0000-0003-2457-6314; 0000-0002-4144-5837; 0000-0002-9555-6903; KDM-6805-2024; A-4861-2018; AAG-6271-2019; GWV-7916-2022; FEP-7816-2022Poly (ethylene glycol dimethacrylate-1-vinyl-1H-pyrrole-2-carboxylic acid)/carbon nanotube, single-walled)/n-Si ([P(EGDMA-VPCA)-SWCNT]/n-Si) photodiode structures was fabricated by using surface polymerization method. While electrical properties were measured at different temperatures, optical properties were measured at room temperatures. Dark and light current characteristics were investigated. Spectral photoresponse measurements of the structure were realized at room temperature. They showed that the fabricated structure exhibited rectification behavior, which makes it a good nominee for optoelectronic implementation area.Publication Si-based photodiode and material characterization of TiO2 thin film(Springer, 2021-05-01) Kaplan, Hüeseyin Kaan; Olkun, Ali; Akay, Sertan Kemal; Pat, Suat; KAPLAN, HÜSEYİN KAAN; Olkun, Ali; AKAY, SERTAN KEMAL; Fen Edebiyat Fakültesi; Fizik Bölümü; 0000-0002-4144-5837; R-7260-2016; GWV-7916-2022; DJH-5166-2022This study proposes a different technique known as the thermionic vacuum arc to produce a TiO2/Si heterojunction photodiode with better electrical properties than literature like the ideality factor indicating that the method is very suitable to form an outstanding quality heterojunction interface. The heterojunction is highly sensitive to different light intensities and has stable photocurrent characteristics as a photodiode. Structural and morphological properties of the produced TiO2/Si heterostructure surfaces were investigated via XRD and AFM, respectively. According to XRD analysis, it was observed that the TiO2 thin film was in a polycrystalline structure with the Anatase and Brookite phases. Also, the film surface is homogenous, and a low roughness value was measured as 3 nm. The thin film thickness and the bandgap values (E-g) were determined based on optical methods. The electrical parameters of TiO2 thin film, such as conductivity type, charge carrier density, and mobility, were also determined by Hall Effect Measurement. The Ag/TiO2/Si/Ag heterojunction device characteristics were determined by conducting the current-voltage (I-V) measurement. The ideality factor (n) and the barrier height (Phi (b)) values were determined as 1.7 and 0.65 eV, respectively. The photo-response performance was measured via transient photocurrent (I-T) measurements for different light intensities.Publication A novel self-powered filterless narrow-band near-infrared photodiode of Cu₂S/Si p+-p isotype heterojunction device with very low visible light noise(Elsevier, 2022-07-08) Kaplan, Hüseyin Kaan; Akay, Sertan Kemal; Ahmetoğlu, Muhitdin; AKAY, SERTAN KEMAL; AHMETOĞLU, MUHİTDİN; KAPLAN, HÜSEYİN KAAN; Fen Edebiyat Fakültesi; Fizik Bölümü; GWV-7916-2022; R-7260-2016; KDM-6805-2024This study aims to achieve a filterless, narrow-band, near-infrared photodiode based on a p(+)-Cu2S/p-Si isotype heterojunction device. The device is developed by depositing 60 nm thick Cu2S thin film on Si substrates from Copper Sulfide pieces via the Thermionic Vacuum Arc technique (TVA). The molecular structure of the thin film is analyzed by utilizing Raman and X-Ray photoelectron spectroscopy (XPS) and confirmed to be in the Cu2S phase. Moreover, the high hole concentration in Cu2S is correlated with XPS results. The photodiode exhibits a response climax centered at 1049 nm and a full-width at half-maximum (FWHM) value of 10(4 )nm. An outstanding responsivity value of 375 mA/W (at 0 V bias) is obtained at a peak wavelength of 1049 nm, which surpasses most filterless, narrow-band photodiodes. Furthermore, while operating at 0 V bias, the photodiode showed an excellent specific detectivity value of 4.17 x 10(11) Jones with a 1.7 x 10(3) on/off ratio (at 1049 nm, 11.47 mW/cm(2)), in addition to its high photocurrent stability and response speed (under 0.8 s). In light of these findings, this proof-of-concept device is a great candidate as a filterless, narrow-band, NIR self-powered photodiode.