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Temperature dependence of electrical characteristics of Cu/n-Si Shottky barrier diodes formed by electrodeposition

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dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.buuauthorErtürk, Kadir
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.scopusid16021109400
dc.contributor.scopusid18036952100
dc.date.accessioned2024-03-19T09:52:52Z
dc.date.available2024-03-19T09:52:52Z
dc.date.issued2008-02
dc.description.abstractElectroplating technique is especially interesting due to its low cost and high quality of deposits being extensively used in industry. In this work, Cu film is electrodeposited on n-type Si (100) substrate using constant current mode. The electrical properties of Cu/n-Si were investigated at several temperatures. The current-voltage analysis based on the thermionic emission theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperatures.
dc.identifier.citationAhmetoğlu, M. ve Ertürk, K. (2008). ''Temperature dependence of electrical characteristics of Cu/n-Si shottky barrier diodes formed by electrodeposition''. Journal of Optoelectronics and Advanced Materials, 10(2), 298-301.
dc.identifier.eissn1841-7132
dc.identifier.endpage301
dc.identifier.issn1454-4164
dc.identifier.issue2
dc.identifier.scopus2-s2.0-40549089920
dc.identifier.startpage298
dc.identifier.urihttps://hdl.handle.net/11452/40485
dc.identifier.volume10
dc.identifier.wos000253691400016
dc.indexed.wosSCIE
dc.indexed.wosCPCIS
dc.language.isoen
dc.publisherNatl Inst Optolectronics
dc.relation.journalJournal of Optoelectronics and Advanced Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectElectrodeposition
dc.subjectSchottky bairier
dc.subjectTemperature dependence
dc.subjectCosts
dc.subjectElectrodeposition
dc.subjectElectrodes
dc.subjectSilicon
dc.subjectThermionic emission
dc.subjectConstant current mode
dc.subjectCurrent voltage analysis
dc.subjectElectrical characteristic
dc.subjectElectroplating technique
dc.subjectSchottky
dc.subjectSi (100) substrate
dc.subjectTemperature dependence
dc.subjectThermionic emission theory
dc.subjectTemperature distribution
dc.subjectGaas schottky diodes
dc.subjectDeposition
dc.subjectHydrogen
dc.subjectMaterials science
dc.subjectOptics
dc.subjectPhysics
dc.subject.scopusSchottky Diodes; Thermionic Emission; Electrical Properties
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosOptics
dc.subject.wosPhysics, applied
dc.titleTemperature dependence of electrical characteristics of Cu/n-Si Shottky barrier diodes formed by electrodeposition
dc.typeconferenceObject
dc.type.subtypeProceedings Paper
dc.wos.quartileQ3
dc.wos.quartileQ4 (Physics, applied)
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atWOS
local.indexed.atScopus

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