Yayın: Temperature dependence of electrical characteristics of Cu/n-Si Shottky barrier diodes formed by electrodeposition
Tarih
Kurum Yazarları
Ahmetoğlu, Muhitdin
Ertürk, Kadir
Yazarlar
Danışman
Dil
Türü
Yayıncı:
Natl Inst Optolectronics
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Özet
Electroplating technique is especially interesting due to its low cost and high quality of deposits being extensively used in industry. In this work, Cu film is electrodeposited on n-type Si (100) substrate using constant current mode. The electrical properties of Cu/n-Si were investigated at several temperatures. The current-voltage analysis based on the thermionic emission theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperatures.
Açıklama
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Konusu
Electrodeposition, Schottky bairier, Temperature dependence, Costs, Electrodeposition, Electrodes, Silicon, Thermionic emission, Constant current mode, Current voltage analysis, Electrical characteristic, Electroplating technique, Schottky, Si (100) substrate, Temperature dependence, Thermionic emission theory, Temperature distribution, Gaas schottky diodes, Deposition, Hydrogen, Materials science, Optics, Physics
Alıntı
Ahmetoğlu, M. ve Ertürk, K. (2008). ''Temperature dependence of electrical characteristics of Cu/n-Si shottky barrier diodes formed by electrodeposition''. Journal of Optoelectronics and Advanced Materials, 10(2), 298-301.