Publication:
Simulation of displacement damage for silicon avalanche photo-diodes

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dc.contributor.buuauthorKılıç, Adnan
dc.contributor.buuauthorPiliçer, Ercan
dc.contributor.buuauthorTapan, İlhan
dc.contributor.buuauthorÖzmutlu, Emin N.
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Ana Bilim Dalı
dc.contributor.researcheridAAH-8769-2021
dc.contributor.scopusid57210230921
dc.contributor.scopusid15843878300
dc.contributor.scopusid54396260200
dc.contributor.scopusid6507726213
dc.date.accessioned2022-09-27T12:25:36Z
dc.date.available2022-09-27T12:25:36Z
dc.date.issued2011-11-01
dc.descriptionBu çalışma, 12-15 Ekim 2010 tarihleri arasında Florence[İtalya]’da düzenlenen International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD)’da bildiri olarak sunulmuştur.
dc.description.abstractThe silicon avalanche photo-diodes (APDs) in the CMS barrel electromagnetic calorimeter will be exposed to an integrated neutron fluence of about 2 x 10(13) n/cm(2) over 10 years of operation. High neutron fluences change the electrical properties of silicon detectors. The changes are proportional to the non-ionising energy loss in the APDs. Using the Geant4 toolkit, we have calculated the non-ionising energy loss as well as the rate of generation of primary defects in the APDs, for the expected neutron fluence.
dc.identifier.citationKılıç, A. vd. (2011). "Simulation of displacement damage for silicon avalanche photo-diodes". Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, 658(1), 70-72.
dc.identifier.endpage72
dc.identifier.issn0168-9002
dc.identifier.issn1872-9576
dc.identifier.issue1
dc.identifier.scopus2-s2.0-80255123290
dc.identifier.startpage70
dc.identifier.urihttps://doi.org/10.1016/j.nima.2011.05.073
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0168900211010801
dc.identifier.urihttp://hdl.handle.net/11452/28854
dc.identifier.volume658
dc.identifier.wos000297783300016
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherElsevier
dc.relation.journalNuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectInstruments & instrumentation
dc.subjectNuclear science & technology
dc.subjectPhysics
dc.subjectRadiation damage
dc.subjectAvalanche photo-diode
dc.subjectGeant4 simulation
dc.subjectPhotodiodes
dc.subjectDetectors
dc.subjectNiel
dc.subjectDiodes
dc.subjectElectric properties
dc.subjectElectron energy loss spectroscopy
dc.subjectEnergy dissipation
dc.subjectHigh energy physics
dc.subjectNeutrons
dc.subjectRadiation damage
dc.subjectRadiation detectors
dc.subjectSemiconducting silicon compounds
dc.subjectSilicon detectors
dc.subjectBarrel electromagnetic calorimeters
dc.subjectDisplacement damages
dc.subjectEnergy loss
dc.subjectGEANT4 simulation
dc.subjectGeant4 toolkits
dc.subjectNeutron fluences
dc.subjectSilicon avalanche
dc.subjectAvalanche diodes
dc.subject.scopusHeavy Ions; Fluence; Trapping
dc.subject.wosInstruments & instrumentation
dc.subject.wosNuclear science & technology
dc.subject.wosPhysics, nuclear
dc.subject.wosPhysics, particles & fields
dc.titleSimulation of displacement damage for silicon avalanche photo-diodes
dc.typeArticle
dc.typeProceedings Paper
dc.wos.quartileQ2
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Ana Bilim Dalı
local.indexed.atScopus
local.indexed.atWOS

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