Publication: Simulation of displacement damage for silicon avalanche photo-diodes
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Authors
Kılıç, Adnan
Piliçer, Ercan
Tapan, İlhan
Özmutlu, Emin N.
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Elsevier
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Abstract
The silicon avalanche photo-diodes (APDs) in the CMS barrel electromagnetic calorimeter will be exposed to an integrated neutron fluence of about 2 x 10(13) n/cm(2) over 10 years of operation. High neutron fluences change the electrical properties of silicon detectors. The changes are proportional to the non-ionising energy loss in the APDs. Using the Geant4 toolkit, we have calculated the non-ionising energy loss as well as the rate of generation of primary defects in the APDs, for the expected neutron fluence.
Description
Bu çalışma, 12-15 Ekim 2010 tarihleri arasında Florence[İtalya]’da düzenlenen International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD)’da bildiri olarak sunulmuştur.
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Keywords
Instruments & instrumentation, Nuclear science & technology, Physics, Radiation damage, Avalanche photo-diode, Geant4 simulation, Photodiodes, Detectors, Niel, Diodes, Electric properties, Electron energy loss spectroscopy, Energy dissipation, High energy physics, Neutrons, Radiation damage, Radiation detectors, Semiconducting silicon compounds, Silicon detectors, Barrel electromagnetic calorimeters, Displacement damages, Energy loss, GEANT4 simulation, Geant4 toolkits, Neutron fluences, Silicon avalanche, Avalanche diodes
Citation
Kılıç, A. vd. (2011). "Simulation of displacement damage for silicon avalanche photo-diodes". Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, 658(1), 70-72.