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Electrical properties of n-Si/Cu Schottky diodes formed by electrodeposition

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dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.buuauthorAlper, Mürsel
dc.contributor.buuauthorŞafak, Mürşide
dc.contributor.buuauthorErtürk, Kadir
dc.contributor.buuauthorGürpınar, B.
dc.contributor.buuauthorKocak, F.
dc.contributor.buuauthorHaciismailoğlu, Muhammed Cüneyt
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.orcid0000-0002-0781-3376
dc.contributor.orcid0000-0002-4756-9988
dc.contributor.researcheridAAG-8795-2021
dc.contributor.researcheridAAE-3350-2022
dc.contributor.researcheridK-7950-2012
dc.contributor.scopusid16021109400
dc.contributor.scopusid7005719283
dc.contributor.scopusid13613646100
dc.contributor.scopusid18036952100
dc.contributor.scopusid36910088200
dc.contributor.scopusid15843834900
dc.contributor.scopusid8975743500
dc.date.accessioned2024-03-07T13:04:49Z
dc.date.available2024-03-07T13:04:49Z
dc.date.issued2007-04
dc.descriptionBu çalışma, 05-07. Temmuz 2006 tarihlerinde Constanta[Romanya]’da düzenlenen 7. International Balkan Workshop on Applied Physics Kongresi‘nde bildiri olarak sunulmuştur.
dc.description.abstractIn this paper we report the electrical characteristics of the Schottky diodes formed by electrodeposition of copper on n-Si (111) from 0.2 M CuSO4 5H(2)O + 0.5 M H3BO3 (pH=2.0) solution. Electrical measurements have been carried out at room temperature. n-Si/Cu diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.59 +/- 0.02 eV and 0.67 +/- 0.02 eV obtained from both I-V and C-V measurements at room temperature, respectively.
dc.identifier.citationAhmetoğlu, M. A. vd. (2007). "Electrical properties of n-Si/Cu Schottky diodes formed by electrodeposition". Journal of Optoelectronics and Advanced Materials, 9(4), 818-821.
dc.identifier.eissn1841-7132
dc.identifier.endpage821
dc.identifier.issn1454-4164
dc.identifier.issue4
dc.identifier.scopus2-s2.0-38549155084
dc.identifier.startpage818
dc.identifier.urihttps://hdl.handle.net/11452/40276
dc.identifier.volume9
dc.identifier.wos000245834800004
dc.indexed.wosSCIE
dc.indexed.wosCPCIS
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.journalJournal of Optoelectronics and Advanced Materials
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectElectrical properties
dc.subjectSchottky diodes
dc.subjectElectrodeposition
dc.subjectDeposition
dc.subjectHydrogen
dc.subjectSurfaces
dc.subjectMaterials science
dc.subjectOptics
dc.subjectPhysics
dc.subjectCurrent voltage characteristics
dc.subjectDiodes
dc.subjectSchottky barrier diodes
dc.subjectElectric properties
dc.subjectLeakage currents
dc.subjectElectrodeposition
dc.subjectElectrodes
dc.subjectSilicon
dc.subjectBarrier heights
dc.subjectC-V measurement
dc.subjectSchottky diodes
dc.subjectDiode currents
dc.subjectReverse bias leakage current
dc.subjectElectrical characteristic
dc.subjectElectrical measurement
dc.subjectSi (1 1 1)
dc.subjectCopper compounds
dc.subject.scopusCatalysis; Born-Oppenheimer Approximation; Molecular Relaxation
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosOptics
dc.subject.wosPhysics, applied
dc.titleElectrical properties of n-Si/Cu Schottky diodes formed by electrodeposition
dc.typeArticle
dc.typeProceedings Paper
dc.wos.quartileQ3
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atWOS
local.indexed.atScopus

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