Publication: Electrical properties of n-Si/Cu Schottky diodes formed by electrodeposition
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Authors
Ahmetoğlu, Muhitdin A.
Alper, Mürsel
Şafak, Mürşide
Ertürk, Kadir
Gürpınar, B.
Kocak, F.
Haciismailoğlu, Muhammed Cüneyt
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Natl Inst Optoelectronics
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Abstract
In this paper we report the electrical characteristics of the Schottky diodes formed by electrodeposition of copper on n-Si (111) from 0.2 M CuSO4 5H(2)O + 0.5 M H3BO3 (pH=2.0) solution. Electrical measurements have been carried out at room temperature. n-Si/Cu diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.59 +/- 0.02 eV and 0.67 +/- 0.02 eV obtained from both I-V and C-V measurements at room temperature, respectively.
Description
Bu çalışma, 05-07. Temmuz 2006 tarihlerinde Constanta[Romanya]’da düzenlenen 7. International Balkan Workshop on Applied Physics Kongresi‘nde bildiri olarak sunulmuştur.
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Keywords
Electrical properties, Schottky diodes, Electrodeposition, Deposition, Hydrogen, Surfaces, Materials science, Optics, Physics, Current voltage characteristics, Diodes, Schottky barrier diodes, Electric properties, Leakage currents, Electrodeposition, Electrodes, Silicon, Barrier heights, C-V measurement, Schottky diodes, Diode currents, Reverse bias leakage current, Electrical characteristic, Electrical measurement, Si (1 1 1), Copper compounds
Citation
Ahmetoğlu, M. A. vd. (2007). "Electrical properties of n-Si/Cu Schottky diodes formed by electrodeposition". Journal of Optoelectronics and Advanced Materials, 9(4), 818-821.