Publication:
Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method

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dc.contributor.buuauthorKaplan, H. K.
dc.contributor.buuauthorAkay, Sertan Kemal
dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.orcid0000-0002-4144-5837
dc.contributor.researcheridGWV-7916-2022
dc.contributor.researcheridR-7260-2016
dc.contributor.scopusid57194768599
dc.contributor.scopusid24801954600
dc.contributor.scopusid16021109400
dc.date.accessioned2023-10-31T10:26:10Z
dc.date.available2023-10-31T10:26:10Z
dc.date.issued2018-05-24
dc.description.abstractZnS thin films have been successfully deposited with the same production parameters using thermionic vacuum arc technique on glass and silicon substrates. UV-Vis absorbance spectra and photoluminescence measurements were performed for the optical characterization of ZnS/glass thin film and ZnS/p-Si heterojunction device, respectively. The optical band gap is found approximately 3.78 eV. Further, electrical parameters of the device were determined for the current-voltage (I-V) measurements in dark and under illumination conditions. The open-circuit voltage and the short-circuit current values have been obtained related to illumination I-V measurements. Also, we have utilized photocurrent measurements to investigate the wavelength dependent to photosensitivity of the ZnS/p-Si heterojunction device.
dc.identifier.citationKaplan, H. K. vd. (2018).''Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method''. Superlattices and Microstructures, 120, 402-409.
dc.identifier.endpage409
dc.identifier.issn0749-6036
dc.identifier.scopus2-s2.0-85049313224
dc.identifier.startpage402
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2018.05.055
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0749603618304634
dc.identifier.urihttp://hdl.handle.net/11452/34686
dc.identifier.volume120
dc.identifier.wos000445713700050
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherElsevier
dc.relation.journalSuperlattices and Microstructures
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectPhysics
dc.subjectZnS/Si
dc.subjectHeterojunction
dc.subjectPhotoelectrical
dc.subjectPhotoluminescence
dc.subjectTVA
dc.subjectThin-films
dc.subjectOptical-properties
dc.subjectSilicon
dc.subjectSI
dc.subjectDeposition
dc.subjectPhotoluminescence
dc.subjectReflectivity
dc.subjectThickness
dc.subjectDiode
dc.subjectGaas
dc.subjectAmorphous films
dc.subjectEnergy gap
dc.subjectHeterojunctions
dc.subjectII-VI semiconductors
dc.subjectOpen circuit voltage
dc.subjectPhotoluminescence
dc.subjectSemiconductor quantum wells
dc.subjectSubstrates
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectZinc sulfide
dc.subjectCurrent-voltage measurements
dc.subjectIllumination conditions
dc.subjectOptical characterization
dc.subjectPhoto-electrical properties
dc.subjectPhotocurrent measurement
dc.subjectPhotoelectrical
dc.subjectPhotoluminescence measurements
dc.subjectThermionic vacuum arc methods
dc.subjectSulfur compounds
dc.subject.scopusZinc Sulfide; Optical Properties; Spray Pyrolysis
dc.subject.wosPhysics, condensed matter
dc.titlePhotoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method
dc.typeArticle
dc.wos.quartileQ2
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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