Photoelectrical properties of InP-InGaAsp heterojunction avalanche photodiodes
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Date
2009-06
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Natl Inst Optoelectronics
Abstract
Photoelectrical properties and the spectrum of the avalanche multiplication factor versus the reverse voltage at room temperature have been studied for LPE grown for InP-In(x)Ga(1-x)AsyP(1-y) heterostructures. The tunneling current becomes substantial at peak junction electric fields as low as 10(5) V/m due to the small direct energy gaps and small effective masses of the structures tested. The process of breakdown in the investigated structures was of the avalanche type. The results found for the lowering of the tunneling current in the pre-breakdown region. The temperature coefficient of the breakdown voltage beta = (1/V-B).(dV(B)/dT) > 0 was determined in the temperature range 77-300 K and its value was found to be beta = 5.78 x 10(-4) K-1.
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Keywords
Heterostructures, Photoelectrical properties, The tunneling current, Photo-diodes, Photodetector, Materials science, Optics, Electric fields, Electron tunneling, Heterojunctions, III-V semiconductors, Indium phosphide, Semiconducting indium phosphide, Avalanche multiplication factor, Direct energy gaps, Effective mass, Photo-electrical properties, Reverse voltages, Temperature coefficient, Temperature range, Tunneling current, Temperature
Citation
Ahmetoğlu, M. vd. (2009). "Photoelectrical properties of InP-InGaAsp heterojunction avalanche photodiodes". Optoelectronics and Advanced Materials, Rapid Communications, 3(6), 608-611.