Publication: Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m
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Date
2012-01
Authors
Ahmetoğlu, Muhitdin
Authors
Andreev, Igor A.
Kunitsyna, Ekaterina V.
Moiseev, Konstantin D.
Mikhailova, Maya P.
Yakovlev, Yu P.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
The electrical end optical characteristics of InAs/InAs0.7Sb0.1P0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V. the reverse current was defined by diffusion mechanism.
Description
Keywords
Instruments & instrumentation, Optics, Physics, III-V semiconductors, Dark currents, Spectral sensetivity, Photodiode structures, Liquid phase epitaxy (LPE), Photodetector, Growth, Inas, Optical materials, Photodiodes, Current flows, Current mechanisms, Diffusion mechanisms, Heterojunction photodiodes, High temperature, InAs, Liquid Phase, Low temperature regions, Optical characteristics, Reverse bias, Reverse currents, Spectral range, Tunneling mechanism, Heterojunctions
Citation
Ahmetoğlu, M. vd. (2012). "Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m". Infrared Physics & Technology, 55(1), 15-18.