Yayın: Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
Tarih
Kurum Yazarları
Ahmetoğlu, Muhitdin A.
Kaynak, Gökay
Gürler, Orhan
Yazarlar
Kunitsyna, Ekaterina V.
Andreev, Igor A.
Sherstnev, Victor V.
L'Vova, T. V.
Mikhaǐlova, Maya P.
Yakovlev, Yu P.
Danışman
Dil
Yayıncı:
Elsevier
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Özet
The paper describes liquid phase epitaxial growth and characterization of the GaSb- and InAs-related materials for the photodiodes and thermophotovoltaic applications. It was shown that doping of the melt with holmium results in obtaining the high purity GaInAsSb and InAs layers. The passivation with the 1 M Na2S aqueous solution makes it possible to prepare flat growth surfaces of GaSb(1 0 0) and InAs(1 0 0) substrates after annealing. A reproducible technique has been developed for fabrication of the high-efficiency GaInAsSb/GaAlAsSb and InAs/InAsSbP photodiodes with the long-wavelength photosensitivity edge of 2.4 and 3.8 mu m, respectively. Room temperature detectivity in the spectral peak reaches D* = (0.8-1.0) x 10(11) W-1 cm Hz(1/2) for the GaInAsSb/GaAlAsSb photodiodes and D* = (3.0-5.0) x 109 W-1 cm Hz(1/2) for the InAs/InAsSbP devices. We have adapted the technology for thermophotovoltaic cells operating at an emitter temperature of 1000-1700 degrees
Açıklama
Bu çalışma, 4-8 Şubat 2010 tarihlerinde İstanbul[Türkiye]'da düzenlenen 2. World Conference on Educational Sciences (WCES-2010)'da bildiri olarak sunulmuştur.
Kaynak:
Anahtar Kelimeler:
Konusu
III-V semiconductors, Passivation, Photodiodes, TPV cells, Rare-earth-elements, Technology, Ingaasp, Materials science, Optics, Arsenic compounds, Characterization, Gallium compounds, III-V semiconductors, Indium arsenide, Narrow band gap semiconductors, Passivation, Photodiodes, Semiconductor alloys, Semiconductor doping, Sodium sulfide, Solutions, Emitter temperature, Growth surfaces, High-efficiency, III-V materials, Infrared photodiode, Long wavelength, Thermophoto voltaic cells, Thermophotovoltaic applications, Sulfur compounds
Alıntı
Kunitsyna, E. V. vd. (2010). "Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells". Optical Materials, 32(12), 1573-1577.