Proposal of alternative sensitive region for MOS based radiation sensors: Yb2O3

dc.contributor.authorYılmaz, Ercan
dc.contributor.buuauthorKahraman, Ayşegül
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.orcid0000-0002-1836-7033tr_TR
dc.contributor.researcheridAAH-6441-2021tr_TR
dc.contributor.scopusid47161190600tr_TR
dc.date.accessioned2023-02-10T11:08:36Z
dc.date.available2023-02-10T11:08:36Z
dc.date.issued2017-10-10
dc.description.abstractThe purpose of this study is to investigate the usability of ytterbium oxide (Yb2O3) as a sensitive region/gate oxide in metal oxide semiconductor (MOS) based dosimeters and to determine the advantages and disadvantages of this device relative to its alternatives. For this purpose, amorphous Yb2O3 films were grown on p type Si by radio-frequency magnetron sputtering and aluminum (Al) was used as front and back ohmic contacts of the capacitor. Yb2O3 MOS devices were irradiated incrementally to the total dose of 70 Gy by Co-60 radioactive source. The capacitance-voltage measurements were performed at low (100 kHz) and high (1 MHz) frequencies to examine the behavior of the traps. The sensitivity of the device for 70 Gy was obtained using flat band voltage shifts as 27.5 +/- 1.1 and 28.1 +/- 1.3 mV/Gy for 100 kHz and 1 MHz, respectively. The changes in the oxide trap charge densities in the studied dose between 0.5 and 70 Gy are in the ranges of (1.09 +/- 0.04) x 10(11)-(1.23 +/- 0.05) x 10(12) cm(-2) for 100 kHz and (-3.26 +/- 0.08) x 10(10)-(8.16 +/- 0.35) x 10(11) cm(-2) for 1 MHz. For both frequencies, there was no significant change in the interface trap charge densities over the applied dose and the density of these traps remained in order of 10(11) cm(-2) after each applied dose. The percentage fading were measured at only 1 MHz for evaluation of the device's dose storage capacity and the results varied from 4% (5 min) to -19% (50 min). An almost constant fading value was obtained after 20 min from irradiation. The capacitor's sensitivity was found to be higher than those of similar devices composed of HfO2, La2O3, SiO2, Sm2O3, and Y2O3. Yb2O3 would be a promising candidate for a new generation of MOS based radiation sensors.en_US
dc.description.sponsorshipTürkiye Cumhuriyeti Kalkınma Bakanlığı - 2016K121110tr_TR
dc.description.sponsorshipAbant İzzet Baysal Üniversitesi - AIBU, BAP -.2014.03.02.765tr_TR
dc.identifier.citationKahraman, A. ve Yılmaz, E. (2017). ''Proposal of alternative sensitive region for MOS based radiation sensors: Yb2O3''. Journal of Vacuum Science and Technology A, 35(6).en_US
dc.identifier.issn0734-2101
dc.identifier.issue6tr_TR
dc.identifier.scopus2-s2.0-85032616177tr_TR
dc.identifier.urihttps://doi.org/10.1116/1.4993545
dc.identifier.urihttps://avs.scitation.org/doi/10.1116/1.4993545
dc.identifier.uri1520-8559
dc.identifier.urihttp://hdl.handle.net/11452/30974
dc.identifier.volume35tr_TR
dc.identifier.wos000415685300038tr_TR
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherA. V. S. Amer Inst Physicsen_US
dc.relation.collaborationYurt içitr_TR
dc.relation.journalJournal of Vacuum Science and Technology Aen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.relation.tubitak2016K121110tr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMaterials scienceen_US
dc.subjectPhysicsen_US
dc.subjectGamma-ray irradiationen_US
dc.subjectPmos dosimetersen_US
dc.subjectElectrical-propertiesen_US
dc.subjectFrequencyen_US
dc.subjectFilmsen_US
dc.subjectCapacitorsen_US
dc.subjectResponsesen_US
dc.subjectLayeren_US
dc.subjectBiasen_US
dc.subjectAmorphous filmsen_US
dc.subjectAmorphous siliconen_US
dc.subjectCapacitanceen_US
dc.subjectFading (radio)en_US
dc.subjectHafnium oxidesen_US
dc.subjectLanthanum compoundsen_US
dc.subjectMagnetron sputteringen_US
dc.subjectMetalsen_US
dc.subjectMOS devicesen_US
dc.subjectOhmic contactsen_US
dc.subjectOxide semiconductorsen_US
dc.subjectRadiation shieldingen_US
dc.subjectSamarium compoundsen_US
dc.subjectSilicaen_US
dc.subjectCapacitance voltage measurementsen_US
dc.subjectFlat-band voltage shiften_US
dc.subjectInterface trap chargeen_US
dc.subjectMetal oxide semiconductoren_US
dc.subjectRadioactive sourcesen_US
dc.subjectOxide trap chargeen_US
dc.subjectRadiation sensorsen_US
dc.subjectRadio frequency magnetron sputteringen_US
dc.subjectYtterbium compoundsen_US
dc.subject.scopusDosimeters; MOSFET; Radiationen_US
dc.subject.wosMaterials science, coatings & filmsen_US
dc.subject.wosPhysics, applieden_US
dc.titleProposal of alternative sensitive region for MOS based radiation sensors: Yb2O3en_US
dc.typeArticle
dc.wos.quartileQ3en_US

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