Excess noise factor of neutron-irradiated silicon avalanche photodiodes
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Date
2005-10-21
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Publisher
Elsevier
Abstract
A Monte Carlo simulation code has been developed in order to analyse avalanche gain and excess noise factor variation of the well-defined silicon avalanche photodiode (APD) geometry as a function of the neutron fluences up to 2 x 10(13) neutrons/cm(2). The results show that the neutron fluence has an influence on the excess noise factor for the same mean avalanche gain for the PbWO4 light. (c) 2005 Elsevier B.V. All rights reserved.
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Keywords
Monte Carlo simulation, Radiation damage, Avalanche photodiodes, Excess noise, Wavelength dependence, Radiation-Damage, Simulation, Gaas, Apd, Instruments & instrumentation, Nuclear Science & Technology, Physics, Avalanche diodes, Gain control, Monte carlo methods, Photodiodes, Radiation damage, Semiconducting silicon, Spurious signal noise, Avalanche gain, Avalanche photodiode (APD), Excess noise, Neutron fluence, Neutron irradiation
Citation
Piliçer, E. vd. (2005). “Excess noise factor of neutron-irradiated silicon avalanche photodiodes”. Nuclear Instruments & Methods in Physıcs Research Section A-Accelerators Spectrometers Detectors And Associated Equipment, 552(1-2), 146-151.