Electrical properties of GaAs-GaAlAs near infrared light emitting diodes
dc.contributor.buuauthor | Ahmetoğlu, Muhitdin | |
dc.contributor.buuauthor | Kucur, Banu | |
dc.contributor.buuauthor | Gücüyener, İsmet | |
dc.contributor.department | Uludağ Üniversitesi/Fen Edebiyat Fakültesi/Fizik Bölümü. | tr_TR |
dc.contributor.department | Uludağ Üniversitesi/Teknik Bilimler Meslek Yüksekokulu/Mekatronik Programı Bölümü. | tr_TR |
dc.contributor.scopusid | 16021109400 | tr_TR |
dc.contributor.scopusid | 36903670200 | tr_TR |
dc.contributor.scopusid | 15834767100 | tr_TR |
dc.date.accessioned | 2022-04-05T06:51:45Z | |
dc.date.available | 2022-04-05T06:51:45Z | |
dc.date.issued | 2012 | |
dc.description.abstract | The electrical properties have been studied for GaAs/AlxGa1-xAs based infrared light emitting diode. The characteristics of the device have been analyzed and unusual feature of the device was observed. It operates as avalanche photodiode when it is reverse biased, while it operates as light emitting diode (LED) when it is forward biased. | en_US |
dc.identifier.citation | Ahmetoğlu, M. vd. (2012). "Electrical properties of GaAs-GaAlAs near infrared light emitting diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(9-10), 782-784. | en_US |
dc.identifier.endpage | 784 | tr_TR |
dc.identifier.issn | 1842-6573 | |
dc.identifier.issn | 2065-3824 | |
dc.identifier.issue | 9-10 | tr_TR |
dc.identifier.scopus | 2-s2.0-84872239338 | tr_TR |
dc.identifier.startpage | 782 | tr_TR |
dc.identifier.uri | https://oam-rc.inoe.ro/volume/2012/6/9-10/September-October%202012/articles | |
dc.identifier.uri | http://hdl.handle.net/11452/25550 | |
dc.identifier.volume | 6 | tr_TR |
dc.identifier.wos | 000310498100002 | tr_TR |
dc.indexed.scopus | Scopus | en_US |
dc.indexed.wos | SCIE | en_US |
dc.language.iso | en | en_US |
dc.publisher | Natl Inst Optoelectronics | en_US |
dc.relation.bap | 2007/36 | tr_TR |
dc.relation.journal | Optoelectronics and Advanced Materials-Rapid Communications | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi | tr_TR |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Materials science | en_US |
dc.subject | Optics | en_US |
dc.subject | Light emitting diode | en_US |
dc.subject | Avalanche breakdown | en_US |
dc.subject | I-V characteristics | en_US |
dc.subject | Aluminum gallium arsenide | en_US |
dc.subject | Diodes | en_US |
dc.subject | Gallium arsenide | en_US |
dc.subject | III-V semiconductors | en_US |
dc.subject | Infrared devices | en_US |
dc.subject | Light emitting diodes | en_US |
dc.subject | Semiconducting gallium | en_US |
dc.subject | Infrared light emitting diodes | en_US |
dc.subject | IV characteristics | en_US |
dc.subject | Near infrared light | en_US |
dc.subject | Avalanche diodes | en_US |
dc.subject.scopus | Liquid Phase Epitaxy; Photoconductive Cells; Inp | en_US |
dc.subject.wos | Materials science, multidisciplinary | en_US |
dc.subject.wos | Optics | en_US |
dc.title | Electrical properties of GaAs-GaAlAs near infrared light emitting diodes | en_US |
dc.type | Article | |
dc.wos.quartile | Q4 | en_US |
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