Electrical properties of GaAs-GaAlAs near infrared light emitting diodes

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dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.buuauthorKucur, Banu
dc.contributor.buuauthorGücüyener, İsmet
dc.contributor.departmentUludağ Üniversitesi/Fen Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.departmentUludağ Üniversitesi/Teknik Bilimler Meslek Yüksekokulu/Mekatronik Programı Bölümü.tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.contributor.scopusid36903670200tr_TR
dc.contributor.scopusid15834767100tr_TR
dc.date.accessioned2022-04-05T06:51:45Z
dc.date.available2022-04-05T06:51:45Z
dc.date.issued2012
dc.description.abstractThe electrical properties have been studied for GaAs/AlxGa1-xAs based infrared light emitting diode. The characteristics of the device have been analyzed and unusual feature of the device was observed. It operates as avalanche photodiode when it is reverse biased, while it operates as light emitting diode (LED) when it is forward biased.en_US
dc.identifier.citationAhmetoğlu, M. vd. (2012). "Electrical properties of GaAs-GaAlAs near infrared light emitting diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(9-10), 782-784.en_US
dc.identifier.endpage784tr_TR
dc.identifier.issn1842-6573
dc.identifier.issn2065-3824
dc.identifier.issue9-10tr_TR
dc.identifier.scopus2-s2.0-84872239338tr_TR
dc.identifier.startpage782tr_TR
dc.identifier.urihttps://oam-rc.inoe.ro/volume/2012/6/9-10/September-October%202012/articles
dc.identifier.urihttp://hdl.handle.net/11452/25550
dc.identifier.volume6tr_TR
dc.identifier.wos000310498100002
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.relation.bap2007/36tr_TR
dc.relation.journalOptoelectronics and Advanced Materials-Rapid Communicationsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMaterials scienceen_US
dc.subjectOpticsen_US
dc.subjectLight emitting diodeen_US
dc.subjectAvalanche breakdownen_US
dc.subjectI-V characteristicsen_US
dc.subjectAluminum gallium arsenideen_US
dc.subjectDiodesen_US
dc.subjectGallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectInfrared devicesen_US
dc.subjectLight emitting diodesen_US
dc.subjectSemiconducting galliumen_US
dc.subjectInfrared light emitting diodesen_US
dc.subjectIV characteristicsen_US
dc.subjectNear infrared lighten_US
dc.subjectAvalanche diodesen_US
dc.subject.scopusLiquid Phase Epitaxy; Photoconductive Cells; Inpen_US
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosOpticsen_US
dc.titleElectrical properties of GaAs-GaAlAs near infrared light emitting diodesen_US
dc.typeArticle
dc.wos.quartileQ4en_US

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