Gallium antimonide - Based photodiodes and thermophotovoltaic devices
dc.contributor.author | Andreev, Igor A. | |
dc.contributor.author | Kunitsyna, Ekaterina V. | |
dc.contributor.author | Mikhaǐlova, Maya P. | |
dc.contributor.author | Yakovlev, Yu P. | |
dc.contributor.buuauthor | Ahmetoğlu, Muhitdin A. | |
dc.contributor.buuauthor | Ertürk, Kadir | |
dc.contributor.department | Uludağ Üniversitesi/Fen Edebiyat Fakültesi/Fizik Bölümü. | tr_TR |
dc.contributor.orcid | 0000-0002-9555-6903 | |
dc.contributor.researcherid | ABA-5148-2020 | tr_TR |
dc.contributor.scopusid | 16021109400 | tr_TR |
dc.contributor.scopusid | 18036952100 | tr_TR |
dc.date.accessioned | 2024-03-21T08:07:33Z | |
dc.date.available | 2024-03-21T08:07:33Z | |
dc.date.issued | 2007 | |
dc.description | Bu çalışma, 22-26, Ağustos 2006 tarihlerinde İstanbul[Türkiye]’de düzenlenen 6. International Conference of the Balkan-Physical-Union Kongresi‘nde bildiri olarak sunulmuştur. | |
dc.description.abstract | This paper briefly presents some important aspects of the GaSb-based material growth, as well as the performance of photodiodes and TPV devices for the 0.9-2.55 mu m spectral range. A reproducible technique has been developed for the production of high-speed and high-efficiency GaSb/GaInAsSb/GaAlAsSb photodiodes. The detectivity of the photodiodes, estimated from the measured noise level and monochromatic current sensitivity, in the spectral peak reaches D*(lambda(max), 1000,1)=(0.8-1.0)x10(11) W(-1)xcmxHz(1/2) at room temperature. Recently, we have adapted the technology for creating GaInAsSb (0.52-0.53 eV band gap) TPV devices. Based on the our results we believe a 0.5 eV band gap GaSb-based TPV cell with an open-circuit voltage well over 300 mV at current 2-3 A is a realistic near-term goal. | en_US |
dc.description.sponsorship | Balkan Phys Union; Turkish Phys Soc; Istanbul Univ; Yildiz Tech Univ; Bogaz Univ; Dogus Univ; European Phys Soc; Govt Istanbul; Istanbul Metropolitan Municipal; Turkish Atomic Energy Author; Sci & Technol Res Council Turkey; United Natl Educ Sci & Cultutal Org; NEL Electronik | en_US |
dc.identifier.citation | Ahmetoğlu, M. A. vd. (2007). "Gallium antimonide - Based photodiodes and thermophotovoltaic devices". ed, S. A. Çetin ve İ. Hikmet. AIP Conference Proceedings, 6. International Conference of the Balkan Physical Union, 899, 447-448. | en_US |
dc.identifier.endpage | 448 | tr_TR |
dc.identifier.isbn | 978-0-7354-0404-5 | |
dc.identifier.issn | 0094-243X | |
dc.identifier.scopus | 2-s2.0-34547455798 | tr_TR |
dc.identifier.startpage | 447 | tr_TR |
dc.identifier.uri | https://doi.org/10.1063/1.2733229 | |
dc.identifier.uri | https://aip.scitation.org/doi/pdf/10.1063/1.2733229 | |
dc.identifier.uri | https://hdl.handle.net/11452/40549 | |
dc.identifier.volume | 899 | tr_TR |
dc.identifier.wos | 000246647900202 | tr_TR |
dc.indexed.pubmed | PubMed | en_US |
dc.indexed.wos | CPCIS | en_US |
dc.language.iso | en | en_US |
dc.publisher | Amer Inst Physics | en_US |
dc.relation.collaboration | Sanayi | en_US |
dc.relation.journal | AIP Conference Proceedings | en_US |
dc.relation.publicationcategory | Konferans Öğesi - Uluslararası | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | GaInAsSb | en_US |
dc.subject | Photodiode | en_US |
dc.subject | GaSb | en_US |
dc.subject | TPV device | en_US |
dc.subject | Heterostructure | en_US |
dc.subject | Ga1-xinxasysb1-y | en_US |
dc.subject.scopus | Defects; Molecular Beam Epitaxy; Ammonium Sulfide | en_US |
dc.subject.wos | Physics, multidisciplinary | en_US |
dc.title | Gallium antimonide - Based photodiodes and thermophotovoltaic devices | en_US |
dc.type | Article | en_US |
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