Gallium antimonide - Based photodiodes and thermophotovoltaic devices

dc.contributor.authorAndreev, Igor A.
dc.contributor.authorKunitsyna, Ekaterina V.
dc.contributor.authorMikhaǐlova, Maya P.
dc.contributor.authorYakovlev, Yu P.
dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.buuauthorErtürk, Kadir
dc.contributor.departmentUludağ Üniversitesi/Fen Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.orcid0000-0002-9555-6903
dc.contributor.researcheridABA-5148-2020tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.contributor.scopusid18036952100tr_TR
dc.date.accessioned2024-03-21T08:07:33Z
dc.date.available2024-03-21T08:07:33Z
dc.date.issued2007
dc.descriptionBu çalışma, 22-26, Ağustos 2006 tarihlerinde İstanbul[Türkiye]’de düzenlenen 6. International Conference of the Balkan-Physical-Union Kongresi‘nde bildiri olarak sunulmuştur.
dc.description.abstractThis paper briefly presents some important aspects of the GaSb-based material growth, as well as the performance of photodiodes and TPV devices for the 0.9-2.55 mu m spectral range. A reproducible technique has been developed for the production of high-speed and high-efficiency GaSb/GaInAsSb/GaAlAsSb photodiodes. The detectivity of the photodiodes, estimated from the measured noise level and monochromatic current sensitivity, in the spectral peak reaches D*(lambda(max), 1000,1)=(0.8-1.0)x10(11) W(-1)xcmxHz(1/2) at room temperature. Recently, we have adapted the technology for creating GaInAsSb (0.52-0.53 eV band gap) TPV devices. Based on the our results we believe a 0.5 eV band gap GaSb-based TPV cell with an open-circuit voltage well over 300 mV at current 2-3 A is a realistic near-term goal.en_US
dc.description.sponsorshipBalkan Phys Union; Turkish Phys Soc; Istanbul Univ; Yildiz Tech Univ; Bogaz Univ; Dogus Univ; European Phys Soc; Govt Istanbul; Istanbul Metropolitan Municipal; Turkish Atomic Energy Author; Sci & Technol Res Council Turkey; United Natl Educ Sci & Cultutal Org; NEL Electroniken_US
dc.identifier.citationAhmetoğlu, M. A. vd. (2007). "Gallium antimonide - Based photodiodes and thermophotovoltaic devices". ed, S. A. Çetin ve İ. Hikmet. AIP Conference Proceedings, 6. International Conference of the Balkan Physical Union, 899, 447-448.en_US
dc.identifier.endpage448tr_TR
dc.identifier.isbn978-0-7354-0404-5
dc.identifier.issn0094-243X
dc.identifier.scopus2-s2.0-34547455798tr_TR
dc.identifier.startpage447tr_TR
dc.identifier.urihttps://doi.org/10.1063/1.2733229
dc.identifier.urihttps://aip.scitation.org/doi/pdf/10.1063/1.2733229
dc.identifier.urihttps://hdl.handle.net/11452/40549
dc.identifier.volume899tr_TR
dc.identifier.wos000246647900202tr_TR
dc.indexed.pubmedPubMeden_US
dc.indexed.wosCPCISen_US
dc.language.isoenen_US
dc.publisherAmer Inst Physicsen_US
dc.relation.collaborationSanayien_US
dc.relation.journalAIP Conference Proceedingsen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararasıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGaInAsSben_US
dc.subjectPhotodiodeen_US
dc.subjectGaSben_US
dc.subjectTPV deviceen_US
dc.subjectHeterostructureen_US
dc.subjectGa1-xinxasysb1-yen_US
dc.subject.scopusDefects; Molecular Beam Epitaxy; Ammonium Sulfideen_US
dc.subject.wosPhysics, multidisciplinaryen_US
dc.titleGallium antimonide - Based photodiodes and thermophotovoltaic devicesen_US
dc.typeArticleen_US

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