Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions

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dc.contributor.buuauthorAfrailov, Muhitdin Ahmetoğlu
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.scopusid55153359100tr_TR
dc.date.accessioned2022-06-20T13:39:20Z
dc.date.available2022-06-20T13:39:20Z
dc.date.issued2004-05
dc.description.abstractDark current voltage characteristics, spectral response and energy diagrams have been studied for LPE grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the isotype heterostructures were investigated at several temperatures. It is shown that a type II staggered heterojunction can behave as a Schottky diode and the dark current-voltage characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. The photocurrent sign dependence on photon energy has been studied as a function of forward bias.en_US
dc.identifier.citationAfrailov, M. A. (2004). “Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions”. Infrared Physics and Technology, 45(3), 169-175.en_US
dc.identifier.endpage175tr_TR
dc.identifier.issn1350-4495
dc.identifier.issue3tr_TR
dc.identifier.scopus2-s2.0-1842614402tr_TR
dc.identifier.startpage169tr_TR
dc.identifier.urihttps://doi.org/10.1016/j.infrared.2003.09.001
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1350449503002305
dc.identifier.urihttp://hdl.handle.net/11452/27328
dc.identifier.volume45tr_TR
dc.identifier.wos000220784300002
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.journalInfrared Physics and Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectInstruments and Instrumentationen_US
dc.subjectOpticsen_US
dc.subjectPhysicsen_US
dc.subjectIsotype structuresen_US
dc.subjectType II heterojunction with staggered band alignmenten_US
dc.subjectPhoto-responseen_US
dc.subjectDark currenten_US
dc.subjectDoping (additives)en_US
dc.subjectElectric potentialen_US
dc.subjectEnergy gapen_US
dc.subjectHeterojunctionsen_US
dc.subjectLight emitting diodesen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotoelectricityen_US
dc.subjectPhotosensitivityen_US
dc.subjectGallium alloysen_US
dc.subject.scopusSemiconductor Quantum Wells; Indium Arsenide; Photodiodesen_US
dc.subject.wosInstruments and instrumentationen_US
dc.subject.wosOpticsen_US
dc.subject.wosPhysics, applieden_US
dc.titleElectrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctionsen_US
dc.typeArticle
dc.wos.quartileQ1 (Clinical neurology)en_US
dc.wos.quartileQ2 (Optics)en_US
dc.wos.quartileQ3 (Instruments & instrumentation)en_US

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