Publication:
Photocurrent amplification in a isotype N+-GaSb/n⁰-GaInAsSb type II heterojunctions

dc.contributor.authorAhmetoğlu (Afrailov), Muhitdin
dc.contributor.buuauthorAHMETOĞLU, MUHİTDİN
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.researcheridKDM-6805-2024
dc.date.accessioned2024-10-23T12:38:21Z
dc.date.available2024-10-23T12:38:21Z
dc.date.issued2008-10-01
dc.description.abstractThe effect of photocurrent amplification was observed in the type II isotype staggered-lineup N+-GaSb/n(0)-GaInAsSb single heterostructure. The illumination intensity influence to the gigantic photocurrent gain effect for applied bias voltage have been studied for this structures. A mechanism of photocurrent amplification in isotype GaSb/GaInAsSb structure due to hole confinement at the type II interface is observed, its magnitude being bias voltage and light intensity dependent. It is shown that the exponential dependence of the photocurrent on intensity confirm the photocurrent gain at small bias is due to modulation of a barrier transparency by the non-equilibrium holes trapped in the potential well in the type II interface as a previously predicted theoretically. (C) 2008 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.infrared.2008.06.005
dc.identifier.endpage494
dc.identifier.issn1350-4495
dc.identifier.issue6
dc.identifier.startpage491
dc.identifier.urihttps://doi.org/10.1016/j.infrared.2008.06.005
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1350449508000443?via%3Dihub
dc.identifier.urihttps://hdl.handle.net/11452/46953
dc.identifier.volume51
dc.identifier.wos000261114700001
dc.indexed.wosWOS.SCI
dc.language.isoen
dc.publisherElsevier
dc.relation.journalInfrared Physics & Technology
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectPhotoelectrical properties
dc.subjectGasb
dc.subjectGainassb
dc.subjectSystem
dc.subjectIsotype structures
dc.subjectType ii heterojunctions with staggered band alignment
dc.subjectPhoto-response
dc.subjectInstruments & instrumentation
dc.subjectOptics
dc.subjectPhysics
dc.titlePhotocurrent amplification in a isotype N+-GaSb/n⁰-GaInAsSb type II heterojunctions
dc.typeArticle
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
relation.isAuthorOfPublication243af714-a388-4a64-b1dd-ce4024cdf289
relation.isAuthorOfPublication.latestForDiscovery243af714-a388-4a64-b1dd-ce4024cdf289

Files

Collections