Publication:
Determination of the parameters for the back-to-back switched Schottky barrier structures

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dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.buuauthorAkay, Sertan Kemal
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.researcheridR-7260-2016
dc.contributor.scopusid15843273600
dc.contributor.scopusid24801954600
dc.date.accessioned2022-03-17T09:06:39Z
dc.date.available2022-03-17T09:06:39Z
dc.date.issued2010-03
dc.description.abstractThe Cr/n-GaAs/Cr and Ag/p-GaAs/Ag metal-semiconductor-metal (MSM) Schottky contacts have been fabricated by reactive radio frequency (RF) sputtering system. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the devices have been investigated in the temperature range of 80-316 K for the back-to-back switched Schottky barrier contacts. These measurements establish that the room temperature barrier height determined from reverse branch of the current-voltage characteristics is close to the value obtained from capacitance-voltage measurements.
dc.identifier.citationAhmetoğlu, M. ve Akay, S. K. (2010). "Determination of the parameters for the back-to-back switched Schottky barrier structures". Current Applied Physics, 10(2), 652-654.
dc.identifier.endpage654
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.issue2
dc.identifier.scopus2-s2.0-70350710018
dc.identifier.startpage652
dc.identifier.urihttps://doi.org/10.1016/j.cap.2009.08.012
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1567173909003927
dc.identifier.urihttp://hdl.handle.net/11452/25128
dc.identifier.volume10
dc.identifier.wos000272279000053
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherElsevier
dc.relation.journalCurrent Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMetal-semiconductor-metal structures
dc.subjectSchottky barrier
dc.subjectGallium arsenide
dc.subjectContacts
dc.subjectDiode
dc.subjectSemiconductors
dc.subjectHeight
dc.subjectGaas
dc.subjectMaterials science
dc.subjectPhysics
dc.subjectArsenic compounds
dc.subjectCapacitance
dc.subjectGallium alloys
dc.subjectGallium compounds
dc.subjectMetals
dc.subjectParameter estimation
dc.subjectPhotodetectors
dc.subjectSchottky barrier diodes
dc.subjectSemiconducting gallium
dc.subjectStructural metals
dc.subjectBarrier heights
dc.subjectCapacitance voltage
dc.subjectCapacitance voltage measurements
dc.subjectCurrent voltage
dc.subjectGallium arsenide
dc.subjectMetal semiconductor metal
dc.subjectMetal-semiconductor-metal structures
dc.subjectRadio-frequency sputtering
dc.subjectRoom temperature
dc.subjectSchottky barrier
dc.subjectSchottky barrier contacts
dc.subjectSchottky barrier structures
dc.subjectSchottky contacts
dc.subjectTemperature range
dc.subjectCurrent voltage characteristics
dc.subject.scopusSchottky Diodes; Thermionic Emission; Interface States
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosPhysics, applied
dc.titleDetermination of the parameters for the back-to-back switched Schottky barrier structures
dc.typeArticle
dc.wos.quartileQ2
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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