Publication:
Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μm

dc.contributor.buuauthorAfrailov, Muhitdin Ahmetoğlu
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.scopusid55153359100
dc.date.accessioned2022-03-28T07:25:01Z
dc.date.available2022-03-28T07:25:01Z
dc.date.issued2010-01
dc.description.abstractThe electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 mu m are reported. At the difference frequency, C-V measurements are showed that at small biases and temperatures which are higher than 160 K, the measured capacity is increase with decreasing frequency. it is possible to explain by presence the deep recombination centers in space charge region of the investigated structures. Have been studied the avalanche multiplication of the photocurrent and the temperature dependence of the monochromatic power-voltage sensitivity in the temperature range 77-300 K.
dc.identifier.citationAfrailov, M. A. (2010). "Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μm". Infrared Physics and Technology, 53(1), 29-32.
dc.identifier.endpage32
dc.identifier.issn1350-4495
dc.identifier.issn1879-0275
dc.identifier.issue1
dc.identifier.scopus2-s2.0-71349083242
dc.identifier.startpage29
dc.identifier.urihttps://doi.org/10.1016/j.infrared.2009.08.005
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1350449509001054
dc.identifier.urihttp://hdl.handle.net/11452/25371
dc.identifier.volume53
dc.identifier.wos000274599800005
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherElsevier
dc.relation.journalInfrared Physics and Technology
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectDark currents
dc.subjectPhotodiode structures
dc.subjectAvalanche multiplication
dc.subjectLiquid-phase epitaxy (LPE)
dc.subjectGrowth
dc.subjectInstruments & instrumentation
dc.subjectOptics
dc.subjectPhysics
dc.subjectCrystal growth
dc.subjectHeterojunction bipolar transistors
dc.subjectHeterojunctions
dc.subjectLiquids
dc.subjectAvalanche multiplication
dc.subjectC-V measurement
dc.subjectDifference frequency
dc.subjectElectrical characteristic
dc.subjectInAsSbP
dc.subjectMid-infrared regions
dc.subjectPhotodiode structures
dc.subjectPower-voltage
dc.subjectRecombination centers
dc.subjectRoom temperature
dc.subjectSpace charge regions
dc.subjectSpectral range
dc.subjectTemperature dependence
dc.subjectTemperature range
dc.subjectUncooled
dc.subjectWavelength ranges
dc.subjectPhotodiodes
dc.subject.scopusSemiconductor Quantum Wells; Heterostructures; Photodiodes
dc.subject.wosInstruments & instrumentation
dc.subject.wosOptics
dc.subject.wosPhysics, applied
dc.titlePhotoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μm
dc.typeArticle
dc.wos.quartileQ3
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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