Detailed transmittance analysis of high-performance SnO₂-doped WO₃thin films in UV-Vis region for electrochromic devices

Abstract

WO(3)is a popular electrochromic device and therefore it has extensively used for the electrochromic (EC) devices such as display and smart window applications. In this study, SnO2-doped WO(3)thin films have been deposited to obtain high-performance EC device and detailed transmittance analysis was determined. At the end of this study, general coloring-bleaching mechanism for SnO2-doped WO(3)active layer is presented. Li ion intercalation/de-intercalation is seen in Nyquist graph for the SnO2-doped WO(3)thin film deposited onto ITO coated glass substrate. All tests were done in 80 s in coloring and bleaching of the SnO2-doped WO(3)layer. Reversibility values of the EC devices mounted in this study were calculated to be 79 and 90% for the device with ITO or FTO conductive layers, respectively. According to the morphological analysis, grain distribution on the surfaces defined as to be perfect. Thanks to Raman analyses, the SnO2-WO(3)phases are seen. Finally, the EC devices have been working in the UV-Vis region. As a result, to obtain the high-performance EC device, SnO2-doped WO(3)active layer is a good choice. TVA method is also proper technology to device manufacturing.