Publication: N+-GaSb/n o -GainAsSb/P +-GaSb type II heterojunction photodiodes with low radiation damage
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Authors
Authors
Ahmetoglu (Afrailov), Muhittin
Kirezli, Burcu
Kaynak, Gökay
Andreev, I. A.
Kunitsyna, E., V
Mikhailova, M. P.
Yakovlev, Yu P.
Advisor
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Natl Inst Optoelectronics
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Abstract
The electrical characteristics of a double type II heterojunction in the GaSb/GalnAsSb/GaSb system with staggered band alignmentwere studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. Have been investigated the radiation effect of Co-60 (gamma)-ray source with 6 MeV photon energy and 1.5x10(11) gamma/cm(2) fluency on the electrical and optical characteristics.
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Keywords
Dark current, Capacitance and voltage characteristics, Photosensitivity, Gamma irradiation, Science & technology, Technology, Physical sciences, Materials science, multidisciplinary, Optics, Materials science